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参数资料
| 型号： | TYNx25RG |
| 厂商： | 意法半导体 |
| 英文描述： | GIGABASE 350 CAT5E PATCH 100 FT, NON BOOT, PURPLE |
| 中文描述： | 第25A可控硅 |
| 文件页数： | 4/7页 |
| 文件大小： | 93K |
| 代理商： | TYNX25RG |
TN25 and TYNx25 Series
4/7
Fig. 1:
Maximum average power dissipation
versus average on-state current.
Fig. 2-1:
Average and D.C. on-state current
versus case temperature.
Fig. 2-2:
Average and D.C. on-state current
versus ambient temperature (copper surface
under tab: S = 1 cm2 (for D2PAK).
Fig. 3:
Relative variation of thermal impedance
versus pulse duration.
Fig. 4:
Relative variation of gate trigger current,
holding current and latching current versus
junction temperature.
Fig. 5:
Surge peak on-state current versus
number of cycles.
0
2
4
6
8
10
12
14
16
0
2
4
6
8
10
12
14
16
18
20
22
24
P(W)
α
= 180°
IT(av)(A)
360°
α
0
25
50
75
100
125
0
2
4
6
8
10
12
16
20
24
28
IT(av)(A)
D.C.
α
= 180°
Tcase(°C)
0
25
50
75
100
125
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
IT(av)(A)
D.C.
α
= 180°
Tamb(°C)
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2 5E+2
0.01
0.10
1.00
K = [Zth/Rth]
Zth(j-c)
Zth(j-a)
tp(s)
-40
-20
0
20
40
60
80
100
120
140
0.0
0.5
1.0
1.5
2.0
2.5
IGT,IH,IL [Tj] / IGT,IH,IL [Tj = 25°C]
IGT
IH & IL
Tj(°C)
1
10
100
1000
0
50
100
150
200
250
300
350
ITSM(A)
Non repetitive
TRepetitive
Number of cycles
One cycle
tp = 10ms
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