参数资料
型号: TZA1020HP
厂商: NXP SEMICONDUCTORS
元件分类: 光电元器件
英文描述: Pre-amplifiers for CD-RW systems
中文描述: 1 CHANNEL READ WRITE AMPLIFIER CIRCUIT, PQFP44
封装: PLASTIC, QFP-44
文件页数: 18/36页
文件大小: 153K
代理商: TZA1020HP
2000 Oct 30
25
Philips Semiconductors
Product specication
Pre-ampliers for CD-RW systems
TZA1020; TZA1020A
Notes
1. In the application, the reference current will be generated by means of a resistor. The given current can be realized
by a resistor of 1.3844 k
. As these are not available, the actual reference current will be slightly different. This
means that all derived signal currents will be scaled in the same way
.
2. IC1 =IC2 =IC3 =IC4 =10 A; ISA1 =ISA2 =ISB1 =ISB2 = 1.25 A; Inegain =50 A; Isdne =20 A; IRREF = 900 A;
Icagain =35 A; ERON = 1.
3. The voltage on TLN can be clamped with respect to GND (positive and negative) with one or two diodes. The clamp
has an internal resistance of approximately 900
.
4. In the TZA1020A, pin MIRN is clamped with respect to GND (positive) by means of one diode.
5. IC1 =IC2 =IC3 =IC4 =25 A; ISA1 =ISA2 =ISB1 =ISB2 = 3.125 A; Isdfine =20 A; IRREF = 900 A.
6.
7. IC1 =IC2 =IC3 =IC4 =25 A; ISA1 =ISA2 =ISB1 =ISB2 = 3.125 A.
8. Ci = total capacitance connected to all input pins C1 to C4 (between pin and ground).
9.
ΣIC1 = 2e-3.(1 + 0.7 sin(12π.3e6.t)) A; ISA1 =ISB1 =ISA2 =ISB2 =25 A; IMIRN =15 A; Ialphagain =50 A;
Isumref =15 A; IAZIN = 100 A; AMON = 1; alphactrl(2 to 0) = 000; algctr4 = 00; algctr6 = 1; algctr5 = 0;
ICAGAIN = 200 A.
10. IC1 =IC2 =IC3 =IC4 =25 A; Ippnscl =50 A; ppnctrl1 = 1, ppnctrl2 = 1.
11. Bandwidth =
.
12. Iop and Ion are limited to 12 A ±3 A.
13.
OUTPUT STAGE; note 13
VPPN
voltage range
3.5
+2.5
V
R(I-V)
I -> V conversion
resistance
244
320
400
k
Voffset(PPN)
offset voltage of PPN
signal
Ippnscl = 3.125 A
38
+6
+50
mV
Ippnscl = 100 A
1165
+80
+1325
mV
ppnctrl1 = 0
Ippnscl = 3.125 A
115
+6
+130
mV
Ippnscl = 100 A
3800
+80
+4000
mV
Ro(PPN)
output resistance PPN
signal
Ippnscl = 3.125 A
2200
Ippnscl =20 A
400
TSR(I-V)
temperature sensitivity of
offset voltage of PPN
signal
0.2
%/
°C
B3dB(PPN)
internal signal bandwidth
of PPN circuit
1
MHz
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
RE
T
rre
I
C1
I
C4
+
()
I
C2
I
C3
+
()
4G
gr
I
ref
I
sdfine
+
()
×
I
ref
-----------------------------------------------------------
I
SA1
I
SB1
+
()
I
SA2
I
SB2
+
()
()
×
×
=
Sr
loop
k
bal
×
2
π
--------------------------------
V
PPN
LR
LR
+
--------------
R
IV
()
×
I
ppnscl
×
=
相关PDF资料
PDF描述
TZA1020 Pre-amplifiers for CD-RW systems
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