- 您现在的位置：买卖IC网 > PDF目录20012 > TZA3011AVH/C2,551 (NXP Semiconductors)IC LASER DRIVER 3.2GBPS 32-HBCC PDF资料下载
参数资料
| 型号： | TZA3011AVH/C2,551 |
| 厂商： | NXP Semiconductors |
| 文件页数： | 8/30页 |
| 文件大小： | 0K |
| 描述： | IC LASER DRIVER 3.2GBPS 32-HBCC |
| 标准包装： | 490 |
| 系列： | A-rate™ |
| 类型： | 激光二极管驱动器（光纤） |
| 数据速率： | 3.2Gbps |
| 通道数： | 1 |
| 电源电压： | 3.14 V ~ 3.47 V |
| 电流 - 电源： | 40mA |
| 电流 - 调制： | 100mA |
| 电流 - 偏置： | 100mA |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 32-HBCC |
| 供应商设备封装： | 32-HBCC（5x5） |
| 包装： | 托盘 |
| 安装类型： | 表面贴装 |
| 其它名称： | 935269940551 TZA3011AVHW-S TZA3011AVHW-S-ND |
第1页第2页第3页第4页第5页第6页第7页当前第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页
Philips Semiconductors
Table 3:
TZA3011A; TZA3011B
30 Mbit/s up to 3.2 Gbit/s A-rate ? laser drivers
Bonding pad description TZA3011UH [1] …continued
Symbol
GNDESD
MON
BIASIN
BIASOUT
GNDCCB
MODIN
GNDCCB
i.c.
MODOUT
Pad
47
48
49
50
51
52
53
54 [2]
55
X
765.0
602.1
431.7
267.6
100.8
? 82.7
? 241.1
? 274.4
? 487.2
Y
1123.8
1123.7
1123.8
1123.8
1123.8
+1123.8
+1123.8
+954.4
+1123.8
Description
ground
input for the monitor photodiode (RF input)
input for the bias current setting
output of the control block for the bias current
ground
input for the modulation current setting
ground
internally connected
output of the control block for the modulation
current
ER
AVR
56
57
? 645.6
? 802.8
+1123.8
+1123.8
input for the optical extinction ratio setting
input for the optical average power level setting
[1]
[2]
[3]
All GND connections should be used.
All ground pads must be connected to ground.
Recommended order of bonding: all GND ?rst, then V CCA ,V CCD and V CCO supplies and ?nally the input and
output pins.
All coordinates are referenced, in μ m, to the center of the die.
Pad is internally connected, do not use.
ACDC pad must be left unconnected for AC-coupling applications. For DC-coupling applications, connect
this pad to ground.
Table 4:
Parameter
Physical characteristics of TZA3011UH
Value
Glass passivation
Bonding pad dimension
Metallization
Thickness
Size
Backing
Attach temperature
Attach time
0.3 μ m PSG (Phospho Silicate Glass) on top of 0.8 μ m of silicon nitride
minimum dimension of exposed metallization is 80 μ m × 80 μ m (pad
size = 90 μ m × 90 μ m)
2.8 μ m AlCu
380 μ m nominal
2.560 mm × 2.510 mm (6.43 mm 2 )
silicon; electrically connected to GND potential through substrate
contacts
< 440 ° C; recommended die attachment is by gluing
< 15 s
7. Functional description
7.1 Data and clock input
The TZA3011 operates with differential Positive Emitter Coupled Logic (PECL), Low
Voltage Positive Emitter Coupled Logic (LVPECL) and Current-Mode Logic (CML) data
and clock inputs with a voltage swing from 100 mV to 1 V (p-p). It is assumed that both the
data and clock inputs carry a complementary signal with the speci?ed peak-to-peak value
(true differential excitation).
9397 750 14437
? Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 06 — 20 January 2005
8 of 30
相关PDF资料 |
PDF描述 |
|---|---|
| AMM18DSEN-S243 | CONN EDGECARD 36POS .156 EYELET |
| RYM36DTBT-S664 | CONN EDGECARD 72POS R/A .156 |
| 5747238-3 | CONN D-SUB PLUG R/A 25POS |
| HHR-20SCPY14F2X3 | BATTERY PACK NIMH 7.2V 1900 MAH |
| T86E227K6R3EAAS | CAP TANT 220UF 6.3V 10% 2917 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| TZA3011BVH/C2,551 | 功能描述:激光驱动器 3.3V D-LOOP LASERDRVR DC-3.2GB RoHS:否 制造商:Micrel 数据速率:4.25 Gbps 工作电源电压:3 V to 3.6 V 电源电流:80 mA 最大工作温度:+ 85 C 封装 / 箱体:QFN-16 封装:Tube |
| TZA3011BVH/C2,557 | 功能描述:激光驱动器 3.3V D-LOOP LASERDRVR DC-3.2GB RoHS:否 制造商:Micrel 数据速率:4.25 Gbps 工作电源电压:3 V to 3.6 V 电源电流:80 mA 最大工作温度:+ 85 C 封装 / 箱体:QFN-16 封装:Tube |
| TZA3012AHW | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:30 Mbits/s up to 3.2 Gbits/s A-rateTM Fibre Optic Receiver |
| TZA3012HW | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:30 Mbit/s up to 3.2 Gbit/s A-Rate fiber-optic receiver |
| TZA3012HW/N1 | 制造商:NXP Semiconductors 功能描述:Part Number Only |
发布紧急采购，3分钟左右您将得到回复。