参数资料
型号: TZA3011AVH/C2,557
厂商: NXP Semiconductors
文件页数: 15/30页
文件大小: 0K
描述: IC LASER DRIVER 3.2GBPS SOT560
标准包装: 2,450
系列: A-rate™
类型: 激光二极管驱动器(光纤)
数据速率: 3.2Gbps
通道数: 1
电源电压: 3.14 V ~ 3.47 V
电流 - 电源: 40mA
电流 - 调制: 100mA
电流 - 偏置: 100mA
工作温度: -40°C ~ 85°C
封装/外壳: 32-HBCC
供应商设备封装: 32-HBCC(5x5)
包装: 托盘
安装类型: 表面贴装
其它名称: 935269940557
TZA3011AVHW
TZA3011AVHW-ND
Philips Semiconductors
TZA3011A; TZA3011B
30 Mbit/s up to 3.2 Gbit/s A-rate ? laser drivers
Table 7: Characteristics …continued
T amb = ? 40 ° C to +85 ° C; R th(j-a) = 35 K/W; P tot = 400 mW; V CCA = 3.14 V to 3.47 V; V CCD = 3.14 V to 3.47 V; V CCO = 3.14 V
to 3.47 V; R AVR = 7.5 k ? ; R ER = 62 k ? ; R MODIN = 6.2 k ? ; R BIASIN = 6.8 k ? ; R PWA = 10 k ? ; R RREF = 10 k ? ; R MAXMON = 13 k ? ;
R MAXOP = 20 k ? ; positive currents ?ow into the IC; all voltages are referenced to ground; unless otherwise speci?ed.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Alarm operating current: pins MAXOP and ALOP
V ref(MAXOP)
reference voltage on
I MAXOP = 10 μ A to 200 μ A
1.15
1.2
1.25
V
pin MAXOP
N MAXOP
ratio of I oper(alarm) and
I oper(alarm) = 7.5 mA to 150 mA
I MAXOP
V CCO = 3.3 V
V CCO = 5.0 V
700
750
800
850
900
950
V D(ALOP)L
drain voltage at active
I ALOP = 500 μ A
0
-
0.4
V
alarm
Alarm monitor current: pins MAXMON and ALMON
V ref(MAXMON)
reference voltage on
I MAXMON = 10 μ A to 200 μ A
1.15
1.2
1.25
V
pin MAXMON
N MAXMON
ratio of I MON(alarm) and
I MON(alarm) = 150 μ A to 3000 μ A
10
15
20
I MAXMON
V D(ALMON)L
drain voltage at active
I ALMON = 500 μ A
0
-
0.4
V
alarm
Reference block: pins RREF and VTEMP
V RREF
reference voltage
R RREF = 10 k ? (1 %);
1.15
1.20
1.25
V
C RREF < 100 pF
V VTEMP
temperature dependent
T j = 25 ° C; C VTEMP < 2 nF
1.15
1.20
1.25
V
voltage
TC VTEMP
temperature coef?cient of
T j = ? 25 ° C to +125 ° C
-
? 2.2
-
mV/K
V VTEMP
I source(VTEMP)
source current of
-
-
? 1
mA
pin VTEMP
I sink(VTEMP)
sink current of pin VTEMP
1
-
-
mA
The relation between the sink current I o(LA) and the modulation current I mod is: I o ( LA ) = I mod × ------------------------------- where Z L(LA) is the
[1]
[2]
[3]
[4]
[5]
The total power dissipation P tot is calculated with V BIAS = V CCO = 3.3 V and I BIAS = 20 mA. In the application V BIAS will be V CCO minus
the laser diode voltage which results in a lower total power dissipation.
The speci?cation of the offset voltage is guaranteed by design.
Any (AVR, ER) settings need to respect I MON > 50 μ A and I MON < 2500 μ A. Therefore, for large ER settings, minimum/maximum AVR
cannot be reached.
100
100 + Z L ( LA )
external load on pin LA. The voltage on pin MODIN programmes the modulation current I mod . This current is divided between Z L(LA) and
the 100 ? internal resistor connected to pins LA. When the modulation current is programmed to 100 mA, a typical Z L(LA) of 25 ? will
result in an I o(LA) current of 80 mA, while 20 mA ?ows via the internal resistor. This corresponds to a voltage swing of 2 V on the real
application load.
V VTEMP = 1.31 + TC VTEMP × T j and T j = T amb + P tot × R th(j-a) .
9397 750 14437
? Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 06 — 20 January 2005
15 of 30
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