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参数资料
| 型号： | U16CCT-E3/4W |
| 厂商： | Vishay General Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 145K |
| 描述： | DIODE ARRAY 150V 8A TO220-3 |
| 标准包装： | 1,000 |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 1.1V @ 8A |
| 电流 - 在 Vr 时反向漏电： | 10µA @ 150V |
| 电流 - 平均整流 (Io)（每个二极管）： | 8A |
| 电压 - (Vr)（最大）： | 150V |
| 反向恢复时间(trr)： | 80ns |
| 二极管类型： | 标准 |
| 速度： | 快速恢复 =< 500 ns，> 200mA（Io） |
| 二极管配置： | 1 对共阴极 |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220AB |
| 包装： | 管件 |
New Product
U(B)16BCT thru U(B)16DCT
Vishay General Semiconductor
www.vishay.com For technical questions within your
region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 89022
Revision: 13-May-08
2
Notes:
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤
40 ms
RATINGS AND CHARACTERISTICS CURVES
(TA
= 25 °C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (TC
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Instantaneous forward voltage per diode (1)
IF
= 4 A
IF
= 8 A
TJ
= 25 °C
VF
0.90
0.99
-
1.10
V
IF
= 4 A
IF
= 8 A
TJ
= 125 °C
0.77
0.87
-
0.95
Reverse current per diode (2)
rated VR
TJ
= 25 °C
TJ
= 125 °C
IR
0.5
155
10
600
μA
Reverse recovery time per diode IF
= 0.5 A, I
R
= 1.0 A, I
rr
= 0.25 A t
rr
28 35 ns
Reverse recovery time per diode
IF
= 8 A, dI/dt = 20 A/μs,
Stored charge per diode QVR
= 200 V, I
rr
= 0.1 I
RM
rr
trr
67 80 ns
33 - nC
Forward recovery time per diode
IF
= 8 A, dI/dt = 64 A/μs,
Peak forward voltage per diode VVF
= 1.1 x V
F
max.
FP
tfr
160 - ns
3.3 - V
THERMAL CHARACTERISTICS (TC
= 25 °C unless otherwise noted)
PARAMETER SYMBOL U16xCT UB16xCT UNIT
Typical thermal resistance per diode RθJC
3.5 °C/W
ORDERING INFORMATION
(Example)
PACKAGE PREFERRED P/N UNIT WEIGHT PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-220AB U16DCT-E3/4W 1.87 4W 50/tube Tube
TO-263AB UB16DCT-E3/4W 1.31 4W 50/tube Tube
TO-263AB UB16DCT-E3/8W 1.31 8W 800/reel Tape and reel
Figure 1. Maximum Forward Current Derating Curve
20
24
16
12
8
4
0
0 25 50 75 100 125 150 175
A
v
erage For
w
ard Re
ctified C
u
rrent (A)
Case Temperature (°C)
Resistive or Inductive Load
Figure 2. Forward Power Loss Characteristics Per Diode
10
8
9
5
3
2
0
1
4
7
6
02468
10
A
v
erage Po
w
er Loss (
W
)
Average Forward Current (A)
D = 0.1
D = 0.3
D = 0.5
D = 0.8
D = 1.0
D = 0.2
D = tp/T tp
T
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