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参数资料
| 型号： | U16DCT-E3/4W |
| 厂商： | Vishay General Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 145K |
| 描述： | DIODE 16A 200V 35NS DUAL TO220-3 |
| 标准包装： | 1,000 |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 1.1V @ 8A |
| 电流 - 在 Vr 时反向漏电： | 10µA @ 200V |
| 电流 - 平均整流 (Io)（每个二极管）： | 8A |
| 电压 - (Vr)（最大）： | 200V |
| 反向恢复时间(trr)： | 80ns |
| 二极管类型： | 标准 |
| 速度： | 快速恢复 =< 500 ns，> 200mA（Io） |
| 二极管配置： | 1 对共阴极 |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220AB |
| 包装： | 管件 |
New Product
U(B)16BCT thru U(B)16DCT
Vishay General Semiconductor
Document Number: 89022
Revision: 13-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Dual Common-Cathode Ultrafast Plastic Rectifier
FEATURES
? Oxide planar chip junction
Ultrafast recovery time
Soft recovery characteristics
Low switching losses, high efficiency
High forward surge capability
Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
Solder dip 260 °C, 40 s (for TO-220AB package)
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of
switching power supplies, freewheeling diodes,
dc-to-dc converters or polarity protection specifically
for DCM application.
MECHANICAL DATA
Case: TO-220AB and TO-263AB
Epoxy meets UL 94V-0
flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity:
As marked
Mounting Torque:
10 in-lbs maximum
PRIMARY CHARACTERISTICS
IF(AV)
8 A x 2
VRRM
100 V, 150 V, 200 V
IFSM
80 A
trr
35 ns
VF
at I
F
= 8 A 0.87 V
TJ max. 150 °C
CASE
PIN 2
PIN 1
PIN 3
TO-220AB
U16xCT
UB16xCT
K
PIN 1
PIN 2 HEATSINK
1
32
1
2
K
TO-263AB
MAXIMUM RATINGS (TC
= 25 °C unless otherwise noted)
PARAMETER SYMBOL U(B)16BCT U(B)16CCT U(B)16DCT UNIT
Maximum repetitive peak reverse voltage VRRM
100 150 200 V
Max. average forward rectified current (Fig. 1)
total device
per diode
IF(AV)
16
8
A
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load per diode
IFSM
80 A
Electrostatic discharge capacitor voltage,
human body model: C = 150 pF, R = 1.5 kΩ
(contact mode)
VC
8kV
Operating junction and storage temperature range TJ, TSTG
- 55 to + 150 °C
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