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参数资料
| 型号： | UB30DCT-E3/4W |
| 厂商： | Vishay General Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 137K |
| 描述： | DIODE 30A 200V 25NS DUAL |
| 标准包装： | 1,000 |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 1.05V @ 15A |
| 电流 - 在 Vr 时反向漏电： | 20µA @ 200V |
| 电流 - 平均整流 (Io)（每个二极管）： | 15A |
| 电压 - (Vr)（最大）： | 200V |
| 反向恢复时间(trr)： | 45ns |
| 二极管类型： | 标准 |
| 速度： | 快速恢复 =< 500 ns，> 200mA（Io） |
| 二极管配置： | 1 对共阴极 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | TO-263AB |
| 包装： | 管件 |
New Product
U(B)30BCT thru U(B)30DCT
Vishay General Semiconductor
Document Number: 89015
Revision: 27-Aug-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
925
Dual Common-Cathode Ultrafast Plastic Rectifier
FEATURES
? Oxide planar chip junction
Ultrafast recovery time
Soft recovery characteristics
Low switching losses, high efficiency
High forward surge capability
Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
Solder dip 260 °C, 40 s (for TO-220AB package)
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of
switching power supplies, freewheeling diodes,
dc-to-dc converters or polarity protection specifically
for CCM application.
MECHANICAL DATA
Case: TO-220AB and TO-263AB
Epoxy meets UL 94V-0
flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity:
As marked
Mounting Torque:
10 in-lbs maximum
PRIMARY CHARACTERISTICS
IF(AV)
2 x 15 A
VRRM
100 V, 150 V, 200 V
IFSM
160 A
trr
17 ns
VF
at I
F
= 15 A 0.892 V
TJ max. 150 °C
CASE
PIN 2
PIN 1
PIN 3
TO-220AB
U30xCT
UB30xCT
K
PIN 1
PIN 2 HEATSINK
1
32
1
2
K
TO-263AB
MAXIMUM RATINGS (TC
= 25 °C unless otherwise noted)
PARAMETER SYMBOL U(B)30BCT U(B)30CCT U(B)30DCT UNIT
Maximum repetitive peak reverse voltage VRRM
100 150 200 V
Max. average forward rectified current
(Fig. 1)
total device
per diode
IF(AV)
30
15
A
Peak forward surge current single half sine-wave
superimposed on rated load per diode
8.3 ms
10 ms
IFSM
160
150
A
Electrostatic discharge capacitor voltage,
human body model: C = 150 pF, R = 1.5 kΩ
(contact mode)
VC
8kV
Operating junction and storage temperature range TJ, TSTG
- 55 to + 150 °C
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