参数资料
型号: UBA2015AT/1,118
厂商: NXP Semiconductors
文件页数: 19/42页
文件大小: 0K
描述: IC LAMP DVR FLUORES 600V 20-SOIC
产品培训模块: Fluorescent Lamp Electronic Ballasts
High Frequency Fluorescent Lighting Ballasts IC Family
标准包装: 1
类型: CFL/TL 驱动器
电流 - 电源: 1.7mA
电源电压: 11.9 V ~ 13.8 V
工作温度: -40°C ~ 125°C
封装/外壳: 20-SOIC(0.295",7.50mm 宽)
供应商设备封装: 20-SO
包装: 标准包装
其它名称: 568-8538-6
NXP Semiconductors
UBA2016A/15/15A
600 V fluorescent lamp driver
A programmable end-of-life window is achieved by the internal bias current sink I bias(EOL) .
The effective relative size of the EOL window will decrease in line with the increasing
series resistance connected to pin EOL.
The end-of-life lamp rectifying detection is only active during the Burn state.
7.6.2 End-of-life overvoltage detection
This protection is intended to protect against symmetrical lamp aging. When in Burn state
the voltage on pin VFB exceeds the overvoltage end-of-life threshold voltage V th(oveol)(VFB)
by more then 50 % of each switching cycle the fault timer will start. V th(oveol)(VFB) is related
to the regulation voltage on pin IFB V reg(IFB) that itself is dependent on the voltage on pin
DIM (see Section 7.4.7.1 “ Lamp    current control and dimming ” ) according to the formula:
V th(oveol)(VFB) = a ? b ? V reg(IFB)
Parameters a and b can be calculated from the V th(oveol)(VFB) values given in Table 6 .
The end-of-life overvoltage protection is only active during Burn state and (for UBA2015A
and UBA2016A) if the voltage at pin DIM is above the overvoltage end-of-life enable
voltage V en(oveol)(DIM) .
7.6.3 Capacitive mode detection
Under all normal operating conditions the half-bridge switching frequency should be
higher than the load resonance frequency. The load then shows an inductive behavior in
that the load current I load lags behind the half-bridge voltage V SHHB . If the amplitude and
the phase difference are large enough, the load current will charge any capacitance on pin
SHHB during the non-overlap time t no(LH) , and discharge it during the other non-overlap
time t no(HL) . As a result the voltage across the switches is almost zero at the moment they
turn on. This is called zero voltage switching; see Figure 14 “ Switching ” . Zero voltage
switching provides the highest switching efficiency and the least Electromagnetic
Emission (EME).
Capacitive mode switching can occur when, due to any abnormal condition, the switching
frequency is below the load resonance frequency. This can happen when the lamp is
removed. The load current will then keep the backgate diode of the switch that is switched
off conducting during the non-overlap time, and if the other switch is turned on, a sudden
step of the half-bridge voltage to the other supply rail takes place (which causes huge
current spikes). Also cross conduction between the switches can occur during the reverse
recovery of the backgate diode. These effects put huge stress on the power switches,
most of which can only handle capacitive mode switching a few times before they break
down.
To protect against capacitive mode switching the IC monitors pin SHHB during the
non-overlap time t no(LH) between switching off of the low-side switch and switching on of
the high-side switch. If a rise of V SHHB (dV SHHB /dt > V th(cm)(SHHB) ) during t no(LH) is not
detected then the IC will conclude that capacitive mode switching is occurring during the
next full cycle. If capacitive mode is detected longer than the fault activation delay time
t det(fault) then the IC will enter Stop state.
Capacitive mode detection is active in all oscillating states for all ICs except in the Ignition
state of the UBA2016A if zero voltage switching has been observed. In that case the
UBA2016A switches to hard switching regulation, see Section 7.6.4 Hard   switching
UBA2016A_15_15A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 16 November 2011
? NXP B.V. 2011. All rights reserved.
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