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参数资料
型号： UC3610DWG4
厂商： TEXAS INSTRUMENTS INC
元件分类： 参考电压二极管
英文描述： 3 A, SILICON, BRIDGE RECTIFIER DIODE, MS-013AA
封装： GREEN, PLASTIC, SOIC-16
文件页数： 1/13页
文件大小： 483K
代理商： UC3610DWG4
UC1610
UC3610
SLUS339B JUNE 1993 REVISED DECEMBER 2004
DUAL SCHOTTKY DIODE BRIDGE
1
www.ti.com
FEATURES
D Monolithic Eight-Diode Array
D Exceptional Efficiency
D Low Forward Voltage
D Fast Recovery Time
D High Peak Current
D Small Size
DESCRIPTION
This
eight-diode
array
is
designed
for
high-current, low duty-cycle applications typical of
flyback voltage clamping for inductive loads. The
dual bridge connection makes this device
particularly applicable to bipolar driven stepper
motors.
The use of Schottky diode technology features
high efficiency through lowered forward voltage
drop and decreased reverse recovery time.
This single monolithic chip is fabricated in both
hermetic CERDIP and copper-leaded plastic
packages. The UC1610 in ceramic is designed for
55
°C to 125°C environments but with reduced
peak current capability. The UC2610 in plastic and
ceramic
is
designed
for
25
°C to 125°C
environments also with reduced peak current
capability; while the UC3610 in plastic has higher
current rating over a 0
°C to 70°C temperature
range.
AVAILABLE OPTIONS
T
Packaged Devices
TA = TJ
SOIC Wide (DW)
DIL (J)
DIL (N)
55
°C to 125°C
UC1610DW
UC1610J
UC1610N
25
°C to 125°C
UC2610DW
UC2610J
UC2610N
0
°C to 70°C
UC3610DW
UC3610J
UC3610N
THERMAL INFORMATION
PACKAGE
θja
θjc
SOIC (DW) 16 pin
50 100(1)
27
DIP (J) 8 pin
125 160
20(2)
DIP (N) 8 pin
103(1)
50
NOTES:
1. Specified
θja (junction-to-ambient) is for devices mounted to 5-in2 FR4 PC board with one ounce copper where noted. When
resistance range is given, lower values are for 5-in2 aluminum PC board. Test PWB was 0.062 in thick and typically used 0.635-mm
trace widths for power packages and 1.3-mm trace widths for non-power packages with a 100-mil x 100-mil probe land area at the
end of each trace.
2.
θjc data values stated were derived from MILSTD1835B. MILSTD1835B states that the baseline values shown are worst case
(mean + 2s) for a 60-mil x 60-mil microcircuit device silicon die and applicable for devices with die sizes up to 14400 square mils.
For device die sizes greater than 14400 square mils use the following values; dual-in-line, 11
°C/W; flat pack, 10°C/W; pin grid array,
10
°C/W.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright
2001, Texas Instruments Incorporated
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相关代理商/技术参数
参数描述
UC3610DWTR 功能描述:桥式整流器 Dual Schottky Diode Bridge RoHS:否 制造商:Vishay 产品:Single Phase Bridge 峰值反向电压:1000 V 最大 RMS 反向电压: 正向连续电流:4.5 A 最大浪涌电流:450 A 正向电压下降:1 V 最大反向漏泄电流:10 uA 功率耗散: 最大工作温度:+ 150 C 长度:30.3 mm 宽度:4.1 mm 高度:20.3 mm 安装风格:Through Hole 封装 / 箱体:SIP-4 封装:Tube
UC3610DWTRG4 功能描述:桥式整流器 Dual Schottky Diode Bridge RoHS:否 制造商:Vishay 产品:Single Phase Bridge 峰值反向电压:1000 V 最大 RMS 反向电压: 正向连续电流:4.5 A 最大浪涌电流:450 A 正向电压下降:1 V 最大反向漏泄电流:10 uA 功率耗散: 最大工作温度:+ 150 C 长度:30.3 mm 宽度:4.1 mm 高度:20.3 mm 安装风格:Through Hole 封装 / 箱体:SIP-4 封装:Tube
UC3610J 制造商:未知厂家 制造商全称:未知厂家 功能描述:BRIDGE/RING DIODE ARRAY|SO
UC3610N 功能描述:桥式整流器 Dual Schottky Diode Bridge RoHS:否 制造商:Vishay 产品:Single Phase Bridge 峰值反向电压:1000 V 最大 RMS 反向电压: 正向连续电流:4.5 A 最大浪涌电流:450 A 正向电压下降:1 V 最大反向漏泄电流:10 uA 功率耗散: 最大工作温度:+ 150 C 长度:30.3 mm 宽度:4.1 mm 高度:20.3 mm 安装风格:Through Hole 封装 / 箱体:SIP-4 封装:Tube
UC3610N 制造商:UNITRODE 功能描述:DUAL SCHOTTKY DIODE BRIDGE 3610
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