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参数资料
| 型号： | UCC2919DTR |
| 厂商： | TEXAS INSTRUMENTS INC |
| 元件分类： | 电源管理 |
| 英文描述： | 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO16 |
| 封装： | GREEN, PLASTIC, MS-012AC, SOIC-16 |
| 文件页数： | 8/27页 |
| 文件大小： | 701K |
| 代理商： | UCC2919DTR |
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UCC2919
UCC3919
SLUS374C JULY 1999 REVISED NOVEMBER 2005
16
www.ti.com
THERMAL INFORMATION
transient thermal impedance
During a fault condition in the retry mode, the average MOSFET power dissipation will generally be quite low
due to the low duty cycle, as defined by:
P
DISS(avg) +
I
MAX
V
IN
t
ON
t
ON )
t
OFF
(with output shorted)
(In the latch mode, tOFF will be the time between a fault and the time the device is reset.)
However, the pulse power in the MOSFET during tON, with the output shorted, is:
P
DISS(pulse) +
I
MAX
V
IN
(with output shorted)
In choosing tON for a given VIN, IMAX, and duty cycle it is important to consult the manufacturer’s transient
thermal impedance curves for the MOSFET to make sure the device is within its safe operating area. These
curves provide the user with the effective thermal impedance of the device for a given time duration pulse and
duty cycle. Note that some of the impedance curves are normalized to one, in which case the transient
impedance values must be multiplied by the dc (steady state) thermal resistance,
θJC.
For duty cycles not shown in the manufacturer’s curves, the transient thermal impedance for any duty cycle and
tON time (given a square pulse) can be estimated from [1]:
q
JC(trans) +
D
q
JC )
(1
* D)
q
SP
where D is the duty cycle:
t
ON
t
ON )
t
OFF
.
and
θSP is the single pulse thermal impedance given in the transient thermal impedance curves for the time
duration of interest (tON). Note that these are absolute numbers, not normalized. If the given single pulse
impedance is normalized, it must first be multiplied by
θJC before using in the equation above.
This effective transient thermal impedance, when multiplied by the pulse power, will give the transient
temperature rise of the die. To keep the junction temperature below the maximum rating, the following must be
true:
q
JC(trans) +
T
J(max) *
T
C
P
DISS(pulse)
If necessary, the junction temperature rise can be reduced by reducing ton (using a smaller value for CT), or
by reducing the duty cycle using the power limiting feature already discussed. Note that in either case, the
amount of load capacitance, COUT, that can be charged before causing a fault, will also be reduced.
(35)
(36)
(37)
(38)
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