参数资料
型号: UF2004-T
厂商: Diodes Inc
文件页数: 1/3页
文件大小: 99K
描述: DIODE ULT FAST 2A 400V DO-15
标准包装: 1
二极管类型: 标准
电压 - (Vr)(最大): 400V
电流 - 平均整流 (Io): 2A
电压 - 在 If 时为正向 (Vf)(最大): 1.3V @ 2A
速度: 快速恢复 =< 500 ns,> 200mA(Io)
反向恢复时间(trr): 50ns
电流 - 在 Vr 时反向漏电: 5µA @ 400V
电容@ Vr, F: 50pF @ 4V,1MHz
安装类型: 通孔
封装/外壳: DO-204AC,DO-15,轴向
供应商设备封装: DO-15
包装: 标准包装
产品目录页面: 1597 (CN2011-ZH PDF)
其它名称: UF2004-TDIDKR
UF2001 - UF2007
2.0A ULTRA-FAST RECTIFIER
Features
?
Diffused Junction
?
Ultra-Fast Switching for High Efficiency
?
Surge Overload Rating to 60A Peak
?
Low Reverse Leakage Current
?
Lead Free Finish, RoHS Compliant (Note 4)
Mechanical Data
?
Case: DO-15
?
Case Material: Molded Plastic.
UL Flammability Classification
Rating 94V-0
?
Moisture Sensitivity: Level 1 per J-STD-020D
?
Terminals: Finish – Tin. Solderable per MIL-STD-202,
Method 208
?
Polarity: Cathode Band
?
Marking: Type Number
?
Ordering Information: See Page 3
?
Weight: 0.4 grams (approximate)
DO-15
Dim
Min
Max
A
25.40
?
B
5.50
7.62
C
0.686
0.889
D
2.60
3.60
All Dimensions in mm
Maximum Ratings and
Electrical Characteristics
@TA
= 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
DS25007 Rev. 4 - 2
1 of 3
www.diodes.com
UF2001 - UF2007
? Diodes Incorporated
Characteristic
Symbol
UF
2001
UF
2002
UF
2003
UF
2004
UF
2005
UF
2006
UF
2007
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage (Note 5)
VRRM
VRWM
VR
50
100
200
400
600
800
1000
V
RMS Reverse Voltage
VR(RMS)
35
70
140
280
420
560
700
V
Average Rectified Output Current
(Note 1) @ TA
= 50
°C
IO
2.0
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single Half Sine-Wave Superimposed on Rated Load
IFSM
60
A
Forward Voltage @ IF
= 2.0A
VFM
1.0
1.3
1.7
V
Peak Reverse Current @ TA
= 25
°C
at Rated DC Blocking Voltage (Note 5) @ TA
= 100
°C
IRM
5.0
100
μA
Reverse Recovery Time (Note 3)
trr
50
75
ns
Typical Total Capacitance (Note 2)
CT
50
30
pF
Typical Thermal Resistance Junction to Ambient
RθJA
50
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-65 to +150
°C
Notes: 1. Valid provided that leads are maintained at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. Measured at IF
= 0.5A, I
R
= 1.0A, I
rr
= 0.25A. See figure 5.
4. RoHS revision 13.2.2003. High temperature solder exemption applied, see EU Directive Annex Note 7.
5. Short duration pulse test used to minimize self heating effect.
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