参数资料
型号: UG1001-T
厂商: Diodes Inc
文件页数: 1/3页
文件大小: 112K
描述: DIODE ULT FAST 1A 50V DO-41
产品变化通告: End Of Life 10/June/2010
标准包装: 5,000
二极管类型: 标准
电压 - (Vr)(最大): 50V
电流 - 平均整流 (Io): 1A
电压 - 在 If 时为正向 (Vf)(最大): 1V @ 1A
速度: 快速恢复 =< 500 ns,> 200mA(Io)
反向恢复时间(trr): 50ns
电流 - 在 Vr 时反向漏电: 5µA @ 50V
安装类型: 通孔
封装/外壳: DO-204AL,DO-41,轴向
供应商设备封装: DO-41
包装: 带卷 (TR)
DS27008 Rev. 4 - 3
1 of 3
www.diodes.com
UG1001 - UG1005
? Diodes Incorporated
NOT RECOMMENDED
FOR NEW DESIGN
UG1001 - UG1005
1.0A ULTRA-FAST GLASS PASSIVATED RECTIFIER
Features
?
Glass Passivated Die Construction
?
Ultra-Fast Switching for High Efficiency
?
Surge Overload Rating to 30A Peak
?
Low Reverse Leakage Current
?
Lead Free Finish, RoHS Compliant (Note 4)
Mechanical Data
?
Case: DO-41
?
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
?
Moisture Sensitivity: Level 1 per J-STD-020C
?
Terminals: Finish - Tin. Plat
ed Leads Solderable per MIL-STD-202,
Method 208
?
Polarity: Cathode Band
?
Marking: Type Number
?
Ordering Information: See Page 3
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Weight: 0.35 grams (approximate)
DO-41
Dim Min Max
A
25.40
?
B
4.06 5.21
C
0.71 0.864
D
2.00 2.72
All Dimensions in mm
Maximum Ratings and
Electrical Characteristics
@TA
= 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic Symbol UG1001 UG1002 UG1003 UG1004 UG1005 Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage (Note 5)
VRRM
VRWM
VR
50 100 200 400 600 V
RMS Reverse Voltage
VR(RMS)
35 70 140 280 420 V
Average Rectified Output Current
(Note 1) @ TA
= 55
°C
IO
1.0 A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
IFSM
30 A
Forward Voltage @ IF
= 1.0A V
FM
1.0 1.3 1.7 V
Peak Reverse Current @ TA
= 25
°C
at Rated DC Blocking Voltage (Note 5) @ TA
= 100
°C
IRM
5.0
100
μA
Reverse Recovery Time (Note 3)
trr
50 75 ns
Typical Total Capacitance (Note 2)
CT
20 10 pF
Typical Thermal Resistance Junction to Ambient
RθJA
95 °C/W
Operating and Storage Temperature Range
Tj, TSTG
-65 to +150
°C
Notes: 1. Valid provided that leads are maintained at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. Measured with IF
= 0.5A, I
R
= 1.0A, I
rr
= 0.25A. See figure 5.
4. RοHS revision 13.2.2003. Glass and high temperature solder exemptions applied, see EU Directive Annex Notes 5 and 7.
5. Short duration pulse test used to minimize self-heating effect.
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