参数资料
型号: UGB10FCT-E3/81
厂商: Vishay General Semiconductor
文件页数: 1/5页
文件大小: 143K
描述: DIODE 10A 300V 35NS DUAL UF
标准包装: 800
电压 - 在 If 时为正向 (Vf)(最大): 1.3V @ 5A
电流 - 在 Vr 时反向漏电: 10µA @ 300V
电流 - 平均整流 (Io)(每个二极管): 5A
电压 - (Vr)(最大): 300V
反向恢复时间(trr): 50ns
二极管类型: 标准
速度: 快速恢复 =< 500 ns,> 200mA(Io)
二极管配置: 1 对共阴极
安装类型: 表面贴装
封装/外壳: TO-263-3,D²Pak(2 引线+接片),TO-263AB
供应商设备封装: TO-263AB
包装: 带卷 (TR)
UG(F,B)10FCT & UG(F,B)10GCT, BYT28(F,B)-300 & BYT28(F,B)-400
Vishay General Semiconductor
Document Number: 88552
Revision: 06-Nov-07
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Dual Common-Cathode Ultrafast Soft Recovery Rectifier
FEATURES
? Glass passivated chip junction
Ultrafast recovery time
Low switching losses, high efficiency
Low forward voltage drop
High forward surge capability
Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
Solder dip 260 °C, 40 s (for TO-220AB and
ITO-220AB package)
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode
power supplies, inverters, freewheeling diodes,
dc-to-dc converters, and other power switching
application.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB
Epoxy meets UL 94V-0
flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix
for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity:
As marked
Mounting Torque:
10 in-lbs maximum
PRIMARY CHARACTERISTICS
IF(AV)
5 A x 2
VRRM
300 V, 400 V
IFSM
60 A
trr
35 ns
VF
1.05 V
TJ
max. 150 °C
CASE
PIN 2
PIN 1
PIN 3
TO-220AB
BYT28, UG10 Series
1
ITO-220AB
BYT28F, UGF10 Series
BYT28B, UGB10 Series
PIN 1
PIN 2
K
HEATSINK
32
1
2
K
PIN 2
PIN 1
PIN 3
TO-263AB
3
1
2
MAXIMUM RATINGS (TC
= 25 °C unless otherwise noted)
PARAMETER SYMBOL
BYT28-300
UG10FCT
BYT28-400
UG10GCT
UNIT
Maximum repetitive peak reverse voltage VRRM
300 400 V
Maximum working reverse voltage VRWM
300 400 V
Maximum RMS voltage VRMS
210 280
Maximum DC blocking voltage VDC
300 400 V
Maximum average forward rectified current at TC
= 100 °C
total device
per diode
I
F(AV)
10
5.0
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
60 A
Operating junction and storage temperature range TJ, TSTG
- 40 to + 150 °C
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
VAC
1500 V
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