参数资料
型号: UGF15JT-E3/45
厂商: Vishay General Semiconductor
文件页数: 3/3页
文件大小: 125K
描述: DIODE 15A 600V 35NS SGL TO220-2
标准包装: 1,000
二极管类型: 标准
电压 - (Vr)(最大): 600V
电流 - 平均整流 (Io): 15A
电压 - 在 If 时为正向 (Vf)(最大): 1.75V @ 15A
速度: 快速恢复 =< 500 ns,> 200mA(Io)
反向恢复时间(trr): 50ns
电流 - 在 Vr 时反向漏电: 30µA @ 600V
安装类型: 通孔
封装/外壳: TO-220-2 绝缘,TO-220AC
供应商设备封装: ITO-220AC
包装: 管件
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RATINGS AND cHARAcTERIsTIcs cunvEs (TA = 25 cc unless otherwise noted)
t6
4:.
R
0
Average Forward Current (A)
m
Case Temperature (“C)
Fig. 1 — Forward Current Derating Cun/e
160
140
120
100
30
60
40
Peak Forward surge Current (A)
20
Number of Cycles at 60 Hz
Fig. 2 - Max. Non?Repetitive Peak Forward Surge Current
too
:1
0.1
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous FonNard Characteristics
Revision: 14?Aug-13 3
10000
Instantaneous Reverse Leakage
Current (pA)
1 000
100
10
Junction Capacitance (pF)
450
400
350
300
250
200
150
100
Stored Charge/Recovery Time ("C/n5)
50
1000
100
I0
Percent oi Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Leakage Characteristics
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance
Junction Temperature (°C)
Fig. 6 ? Reverse Switching Characteristics
Document N umber: 88828
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