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参数资料
| 型号： | UGF18DCTHE3/45 |
| 厂商： | Vishay General Semiconductor |
| 文件页数： | 3/5页 |
| 文件大小： | 673K |
| 描述： | DIODE 18A 200V 20NS DUAL TO220-3 |
| 标准包装： | 1,000 |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 1.1V @ 9A |
| 电流 - 在 Vr 时反向漏电： | 10µA @ 200V |
| 电流 - 平均整流 (Io)（每个二极管）： | 18A |
| 电压 - (Vr)（最大）： | 200V |
| 反向恢复时间(trr)： | 30ns |
| 二极管类型： | 标准 |
| 速度： | 快速恢复 =< 500 ns，> 200mA（Io） |
| 二极管配置： | 1 对共阴极 |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 隔离片 |
| 供应商设备封装： | ITO-220AB |
| 包装： | 管件 |
UG18xCT, UGF18xCT, UGB18xCT
www.vishay.com
Vishay General Semiconductor
Revision: 06-Sep-13
3
Document Number: 88759
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RATINGS AND CHARACTERISTICS CURVES (TA
= 25 °C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Max. Non-Repeti
tive Peak Forward Surge
Current Per Diode
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 4 - Typical Reverse Leakage Characteristics Per Diode
Fig. 5 - Reverse Switching Characteristics Per Diode
Fig. 6 - Typical Juncti
on Capacitance Per Diode
0
25
50
75
100
125
150
175
0
4
8
12
16
20
24
Average Forward Current (A)
Case Temperature (°C)
Resistive or Inductive Load
1
10
100
10
100
1000
TC
= 105 °C
8.3 ms Single Half Sine-Wave
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.01
0.1
1
10
100
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
TJ
= 25 °C
Pulse Width = 300 μs
1 % Duty Cycle
0
20
40
60
80
100
0.01
0.1
1
10
100
1000
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Leakage
Current (μA)
TJ
= 100 °C
TJ
= 125 °C
TJ
= 25 °C
0
25
50
75
100
125
150
175
0
10
20
30
40
50
60
Junction Temperature (°C)
150 A/μs
100 A/μs
20 A/μs
20 A/μs
50 A/μs100 A/μs
50 A/μs
150 A/μs
trr
Qrr
dI/dt =
IF
= 9.0 A
VR
= 30 V
Stored Charge/Reverse Recovery Time
(nC/ns)
0.1
1
10
100
1
10
100
Reverse Voltage (V)
Junction Capacitance (pF)
TJ
= 125 °C
f = 1.0 MHz
Vsig
= 50 mVp-p
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