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| 型号： | ULN2803ADWG4 |
| 厂商： | Texas Instruments |
| 文件页数： | 8/14页 |
| 文件大小： | 0K |
| 描述： | IC DUAL TRANS ARRAY HV 18-SOIC |
| 标准包装： | 40 |
| 类型： | 达林顿晶体管矩阵 |
| 驱动器/接收器数： | 8/0 |
| 电源电压： | 5V |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 18-SOIC（0.295"，7.50mm 宽） |
| 供应商设备封装： | 18-SOIC |
| 包装： | 管件 |
SLRS049F – FEBRUARY 1997 – REVISED JANUARY 2014
Absolute Maximum Ratings
(1)
at 25°C free-air temperature (unless otherwise noted)
VALUE
UNIT
Collector-emitter voltage
50
V
Input voltage(2)
30
V
Peak collector current
500
mA
Output clamp current
500
mA
Total substrate-terminal current
–2.5
A
D package
73.14
θJA
Package thermal impedance(3)(4)
°C/W
DW package
62.66
TJ
Operating virtual junction temperature
150
°C
Tstg
Storage temperature range
–65 to 150
°C
(1)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2)
All voltage values, unless otherwise noted, are with respect to the emitter/substrate terminal GND.
(3)
Maximum power dissipation is a function of TJ(max), θJA, and TA. The maximum allowable power dissipation at any allowable ambient
temperature is PD = (TJ(max) – TA)/θJA. Operating at the absolute maximum TJ of 150°C can affect reliability.
(4)
The package thermal impedance is calculated in accordance with JESD 51-7.
Electrical Characteristics
at TA = 25°C free-air temperature (unless otherwise noted)
ULN2002A
PARAMETER
TEST CONDITIONS
UNIT
MIN
TYP
MAX
VCE = 50 V,
ICEX
Collector cutoff current
II = 0
50
μA
see Figure 1
VCE = 50 V,
IC = 500 μA,
II(off)
Off-state input current
50
65
μA
TA = 70°C
see Figure 2
II(on)
Input current
VI = 3.85 V,
See Figure 3
0.93
1.35
mA
IC = 200 mA
2.4
VCE = 2 V,
VI(on)
On-state input voltage
IC = 250 mA
2.7
V
see Figure 4
IC = 300 mA
3
II = 250 μA,
IC = 100 mA
0.9
1.1
see Figure 5
II = 350 μA,
VCE(sat)
Collector-emitter saturation voltage
IC = 200 mA
1
1.3
V
see Figure 5
II = 500 μA,
IC = 350 mA
1.3
1.6
see Figure 5
IR
Clamp diode reverse current
VR = 50 V,
see Figure 6
50
μA
VF
Clamp diode forward voltage
IF = 350 mA
see Figure 7
1.7
2
V
Ci
Input capacitance
VI = 0,
f = 1 MHz
15
25
pF
Switching Characteristics
TA = 25°C
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
tPLH
Propagation delay time, low- to high-level output
130
VS = 50 V, CL = 15 pF, RL = 163 Ω,
ns
See Figure 8
tPHL
Propagation delay time, high- to low-level output
20
VOH
High-level output voltage after switching
VS – 20
mV
Copyright 1997–2014, Texas Instruments Incorporated
3
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| ULN2803ADWR | 功能描述:达林顿晶体管 TRANSISTOR ARRAYS RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
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| ULN2803ADWRG4 | 功能描述:达林顿晶体管 TRANSISTOR ARRAYS RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| ULN2803AFW | 功能描述:IC DRIVER DARL 8CH 50V.5A 18-SOL RoHS:否 类别:集成电路 (IC) >> 接口 - 驱动器，接收器，收发器 系列:- 标准包装:1,000 系列:- 类型:收发器 驱动器/接收器数:2/2 规程:RS232 电源电压:3 V ~ 5.5 V 安装类型:表面贴装 封装/外壳:16-SOIC（0.295"，7.50mm 宽） 供应商设备封装:16-SOIC 包装:带卷 (TR) |
| ULN2803AFW(5,M) | 制造商:Toshiba America Electronic Components 功能描述:Trans Darlington NPN 50V 0.5A 18-Pin SOL |
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