参数资料
型号: UM6K1NTN
厂商: Rohm Semiconductor
文件页数: 3/4页
文件大小: 0K
描述: MOSFET 2N-CH 30V .1A SOT-363
产品培训模块: MOSFETs
产品目录绘图: UM6K Series SOT-363
特色产品: ECOMOS? Series MOSFETs
标准包装: 1
FET 型: 2 个 N 沟道(双)
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 100mA
开态Rds(最大)@ Id, Vgs @ 25° C: 8 欧姆 @ 10mA,4V
Id 时的 Vgs(th)(最大): 1.5V @ 100µA
输入电容 (Ciss) @ Vds: 13pF @ 5V
功率 - 最大: 150mW
安装类型: 表面贴装
封装/外壳: 6-TSSOP,SC-88,SOT-363
供应商设备封装: UMT6
包装: 标准包装
产品目录页面: 1638 (CN2011-ZH PDF)
其它名称: UM6K1NDKR
UM6K1NDKR-ND
UM6K1NTNDKR
UM6K1N
Transistors
9
8
V GS =4V
Pulsed
0.5
0.2
V DS =3V
Pulsed
200m
100m
V GS =0V
Pulsed
7
6
5
4
I D =100mA
I D =50mA
0.1
0.05
0.02
Ta= ? 25 ° C
25 ° C
75 ° C
125 ° C
50m
20m
10m
5m
Ta=125 ° C
75 ° C
25 ° C
? 25 ° C
3
2
1
0.01
0.005
0.002
2m
1m
0.5m
0.2m
? 50 ? 25
0
0
25
50
75
100 125
150
0.001
0.0001 0.0002
0.0005 0.001 0.002
0.005 0.01 0.02
0.05 0.1 0.2
0.5
0.1m
0
0.5
1
1.5
CHANNEL TEMPERATURE : Tch ( ° C)
Fig.7 Static Drain-Source On-State
Resistance vs. Channel Temperature
DRAIN CURRENT : I D (A)
Fig.8 Forward Transfer Admittance vs.
Drain Current
SOURCE-DRAIN VOLTAGE : V SD (V)
Fig.9 Reverse Drain Current vs.
Source-Drain Voltage ( )
200m
100m
50m
20m
Ta=25 ° C
Pulsed
50
20
Ta=25 ° C
f=1MH Z
V GS =0V
Pulsed
C iss
1000
500
200
t d(off)
t f
Ta=25 ° C
V DD =5V
V GS =5V
R G =10 ?
10m
V GS =4V
0V
10
100
5m
5
C oss
50
t r
2m
1m
0.5m
0.2m
2
1
C rss
20
10
5
t d(on)
0.1m
0
0.5 1
SOURCE-DRAIN VOLTAGE : V SD (V)
1.5
0.5
0.1
0.2 0.5 1 2 5 10 20
DRAIN-SOURCE VOLTAGE : V DS (V)
50
2
0.1 0.2
0.5 1 2 5 10 20
DRAIN CURRENT : I D (mA)
50
100
Fig.10 Reverse Drain Current vs.
Source-Drain Voltage ( )
Fig.11 Typical Capacitance vs.
Drain-Source Voltage
Fig.12 Switching Characteristics
Switching characteristics measurement circuit
Pulse Width
R G
V GS
I D
D.U.T.
R L
V DS
V GS
V DS
50%
10%
10%
90%
50%
10%
V DD
90%
90%
t d(on)
t on
t r
t d(off)
t f
t off
Fig.13
Switching Time Test Circuit
Fig.14
Switching Time Waveforms
Rev.B
3/3
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