参数资料
型号: UN1212
英文描述: Composite Device - Transistors with built-in Resistor
中文描述: 复合装置-内置晶体管,电阻,
文件页数: 13/14页
文件大小: 454K
代理商: UN1212
13
UNR121x
SJH00003BJD
C
ob
V
CB
V
IN
I
O
0
1
6
5
4
3
2
1
10
100
V
CB
(V)
(
)
o
f
=
1 MHz
I
E
=
0
T
a
=
25
°
C
0.01
0.1
0.1
1
10
100
1
10
100
I
I
O
(mA)
V
O
=
0.2 V
T
a
=
25
°
C
相关PDF资料
PDF描述
UNR1213 Composite Device - Transistors with built-in Resistor
UN1213 Composite Device - Transistors with built-in Resistor
UNR1214 Composite Device - Transistors with built-in Resistor
UN1214 Composite Device - Transistors with built-in Resistor
UNR1215 Composite Device - Transistors with built-in Resistor
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参数描述
UN1213 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planar type
UN1214 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
UN1215 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planar type
UN1215Q 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SC-71
UN1215R 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SC-71