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参数资料
| 型号： | UN1218 |
| 英文描述： | Composite Device - Transistors with built-in Resistor |
| 中文描述： | 复合装置-内置晶体管，电阻， |
| 文件页数： | 6/14页 |
| 文件大小： | 454K |
| 代理商： | UN1218 |
6
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SJH00003BJD
C
ob
V
CB
I
O
V
IN
V
IN
I
O
UNR1214
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
UNR1215
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
0
0
12
2
10
4
8
6
40
120
80
160
C
V
CE
(V)
T
a
=
25
°
C
I
B
=
1.0 mA
0.1 mA
0.2 mA
0.3 mA
0.4 mA
0.5 mA
0.6 mA
0.0.7 mA
0.01
0.1
0.1
1
10
100
1
10
100
C
I
C
(mA)
I
C
/ I
B
=
10
T
a
=
75
°
C
25
°
C
25
°
C
0
1
100
200
300
400
10
100
1
000
F
I
C
(mA)
V
CE
=
10 V
T
a
=
75
°
C
25
°
C
25
°
C
0
0.1
6
5
4
3
2
1
1
10
100
V
CB
(V)
(
)
o
f
=
1 MHz
I
E
=
0
T
a
=
25
°
C
1
0.4
10
10
2
10
3
10
4
1.4
1.2
1.0
0.8
0.6
O
μ
A
V
IN
(V)
V
O
=
5 V
T
a
=
25
°
C
0.01
0.1
0.1
1
10
100
1
10
100
I
I
O
(mA)
V
O
=
0.2 V
T
a
=
25
C
0
0
12
2
10
4
8
6
40
120
80
160
C
V
CE
(V)
T
a
=
25
°
C
0.1 mA
0.2 mA
0.3 mA
0.4 mA
0.5 mA
0.6 mA
0.7 mA
I
1.0 mA
00.9 mA
0.01
0.1
0.1
1
10
100
1
10
100
C
I
C
(mA)
I
C
/ I
B
=
10
T
a
= 75
°
C
25
°
C
25
°
C
0
1
100
200
300
400
10
100
1
000
F
I
C
(mA)
V
CE
=
10 V
T
a
=
75
°
C
25
°
C
25
°
C
相关PDF资料 |
PDF描述 |
|---|---|
| UN121D | Composite Device - Transistors with built-in Resistor |
| UNR121E | Composite Device - Transistors with built-in Resistor |
| UN121E | Composite Device - Transistors with built-in Resistor |
| UNR121F | Composite Device - Transistors with built-in Resistor |
| UN121F | Composite Device - Transistors with built-in Resistor |
相关代理商/技术参数 |
参数描述 |
|---|---|
| UN1219 | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planar type |
| UN121D | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| UN121E | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planar type |
| UN121F | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planar type |
| UN121K | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planer transistor |
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