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参数资料
| 型号： | UNR111T |
| 厂商： | Panasonic Corporation |
| 英文描述： | Silicon NPN, PNP epitaxial planar type (Tr1,2) |
| 中文描述： | 硅npn型，外延平面型进步党（TR1的，2） |
| 文件页数： | 2/5页 |
| 文件大小： | 121K |
| 代理商： | UNR111T |
UP03396
2
SJJ00295AED
Tr2
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Tr1
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Common characteristics chart
P
T
T
a
0
80
120
40
0
150
125
100
75
25
50
T
T
Ambient temperature T
a
(
°
C)
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
=
10
μ
A, I
E
=
0
I
C
=
2 mA, I
B
=
0
V
CB
=
50 V, I
E
=
0
V
CE
=
50 V, I
B
=
0
V
EB
=
6 V, I
C
=
0
V
CE
=
10 V, I
C
=
5 mA
I
C
=
10 mA, I
B
=
0.3 mA
V
CC
=
5 V, V
B
=
0.5 V, R
L
=
1 k
V
CC
=
5 V, V
B
=
2.5 V, R
L
=
1 k
50
V
Collector-emitter voltage (Base open)
V
CEO
50
V
Collector-base cutoff current (Emitter open)
I
CBO
I
CEO
0.1
μ
A
μ
A
Collector-emitter cutoff current (Base open)
0.5
Emitter-base cutoff current (Collector open)
I
EBO
0.5
mA
Forward current transfer ratio
h
FE
35
Collector-emitter saturation voltage
V
CE(sat)
0.25
V
Output voltage high-level
V
OH
4.9
V
Output voltage low-level
V
OL
R
1
0.2
V
Input resistance
30%
10
+
30%
k
Resistance ratio
R
1
/ R
2
0.8
1.0
1.2
Transition frequency
f
T
V
CB
=
10 V, I
E
=
2 mA, f
=
200 MHz
150
MHz
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
=
10
μ
A, I
E
=
0
I
C
=
2 mA, I
B
=
0
V
CB
=
50 V, I
E
=
0
V
CE
=
50 V, I
B
=
0
V
EB
=
6 V, I
C
=
0
V
CE
=
10 V, I
C
=
5 mA
I
C
=
10 mA, I
B
=
0.3 mA
V
CC
=
5 V, V
B
=
0.5 V, R
L
=
1 k
V
CC
=
5 V, V
B
=
2.5 V, R
L
=
1 k
50
50
V
Collector-emitter voltage (Base open)
V
CEO
V
Collector-base cutoff current (Emitter open)
I
CBO
I
CEO
I
EBO
0.1
0.5
0.2
μ
A
μ
A
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
mA
Forward current transfer ratio
h
FE
80
400
Collector-emitter saturation voltage
V
CE(sat)
V
OH
0.25
V
Output voltage high-level
4.9
V
Output voltage low-level
V
OL
0.2
+
30%
V
Input resistance
R
1
30%
22
k
Resistance ratio
R
1
/ R
2
0.47
Transition frequency
f
T
V
CB
=
10 V, I
E
=
1 mA, f
=
200 MHz
80
MHz
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相关代理商/技术参数 |
参数描述 |
|---|---|
| UNR111X | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planer transistor |
| UNR111XSERIES(UN111XSERIES) | 制造商:未知厂家 制造商全称:未知厂家 功能描述:UNR111X Series (UN111X Series) - PNP Transistor with built-in Resistor |
| UNR1121 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | 50V V(BR)CEO | 500MA I(C) | SC-71 |
| UNR1121(UN1121) | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Composite Device - Transistors with built-in Resistor |
| UNR1122 | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:Composite Transistors Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) |
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