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| 型号： | UNR8231(UN8231) |
| 英文描述： | Composite Device - Transistors with built-in Resistor |
| 中文描述： | 复合装置-内置晶体管，电阻， |
| 文件页数： | 1/3页 |
| 文件大小： | 78K |
| 代理商： | UNR8231(UN8231) |
1
Transistors with built-in Resistor
UNR8231/UNR8231A (UN8231/UN8231A)
Silicon NPN epitaxial planer transistor
For switching
I Features
G High forward current transfer ratio hFE.
G Resistor built-in type, allowing downsizing of the equipment and
reduction of the number of parts.
G Available in a type with radial taping.
I Absolute Maximum Ratings (Ta=25C)
1 : Emitter
2 : Collector
3 : Base
MT-2-A1 Package
Unit: mm
Internal Connection
Parameter
Symbol
Ratings
Unit
UNR8231
VCBO
20
V
UNR8231A
60
UNR8231
VCEO
20
V
UNR8231A
50
Peak collector current
ICP
1.5
A
Collector current
IC
0.7
A
Total power dissipation
PT*1
W
Junction temperature
Tj
150
C
Storage temperature
Tstg
–55 to +150
C
B
C
R1(1k
)
R2
(47k
)
E
Collector to
base voltage
Collector to
emitter voltage
I Electrical Characteristics (Ta=25C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector cutoff current
ICBO
VCB = 15V, IE = 0
1
A
Collector cutoff current
ICEO
VCE = 15V, IB = 0
10
A
Emitter cutoff current
IEBO
VEB = 14V, IC = 0
0.5
mA
Collector to base voltage
UNR8231
VCBO
IC = 10
A, I
E = 0
20
V
UNR8231A
60
Collector to emitter voltage
UNR8231
VCEO
IC = 1mA, IB = 0
20
V
UNR8231A
50
Forward current transfer ratio
hFE*VCE = 10V, IC = 150mA
800
2100
Collector to emitter saturation voltage
VCE(sat)*IC = 500mA, IB = 5mA
0.4
V
Input resistance
R1
0.7
1
1.3
k
Resistance ratio
R1/R2
0.016
0.021
0.025
Transition frequency
fT
VCB = 10V, IE = –50mA, f = 200MHz
200
MHz
* Printed circuit board: Copper foil area of 1cm2 or more and thickness of
1.7mm for the collector portion.
*Pulse measurement
6.9±0.1
2.5±0.1
0.45
1.05±0.05
2.5±0.5
123
2.5±0.5
+0.10
–0.05
0.45
+0.10
–0.05
(0.8)
(0.5)
(1.0)
4.5
±0.1
14.5
±0.5
4.0
0.7
0.65 max.
(0.2)
Note) The Part numbers in the Parenthesis show conventional part number.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| UNR9110 | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planer transistor |
| UNR9110G0L | 功能描述:TRANS PNP W/RES 160HFE SSMINI RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路﹐预偏压式 系列:- 标准包装:10,000 系列:- 晶体管类型:NPN - 预偏压 电流 - 集电极 (Ic)（最大）:100mA 电压 - 集电极发射极击穿（最大）:50V 电阻器 - 基极 (R1)（欧）:47k 电阻器 - 发射极 (R2)（欧）:47k 在某 Ic、Vce 时的最小直流电流增益 (hFE):70 @ 5mA，5V Ib、Ic条件下的Vce饱和度（最大）:300mV @ 500µA，10mA 电流 - 集电极截止（最大）:- 频率 - 转换:100MHz 功率 - 最大:250mW 安装类型:表面贴装 封装/外壳:SC-70，SOT-323 供应商设备封装:PG-SOT323-3 包装:带卷 (TR) 其它名称:SP000756242 |
| UNR9110J | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planar type |
| UNR9110J(UN9110J) | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Composite Device - Transistors with built-in Resistor |
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