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参数资料
| 型号： | UP03397 |
| 厂商： | PANASONIC CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | Silicon NPN epitaxial planar type (Tr1, Tr2) |
| 中文描述： | 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | ROHS COMPLIANT, SSMINI5-F2, 5 PIN |
| 文件页数： | 2/5页 |
| 文件大小： | 117K |
| 代理商： | UP03397 |
UP03397
2
SJJ00296AED
Tr2
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Tr1
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Common characteristics chart
P
T
T
a
0
80
120
40
0
150
125
100
75
25
50
T
T
Ambient temperature T
a
(
°
C)
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
=
10
μ
A, I
E
=
0
I
C
=
2 mA, I
B
=
0
V
CB
=
50 V, I
E
=
0
V
CE
=
50 V, I
B
=
0
V
EB
=
6 V, I
C
=
0
V
CE
=
10 V, I
C
=
5 mA
I
C
=
10 mA, I
B
=
0.3 mA
V
CC
=
5 V, V
B
=
0.5 V, R
L
=
1 k
V
CC
=
5 V, V
B
=
2.5 V, R
L
=
1 k
50
V
Collector-emitter voltage (Base open)
V
CEO
50
V
Collector-base cutoff current (Emitter open)
I
CBO
I
CEO
0.1
μ
A
μ
A
Collector-emitter cutoff current (Base open)
0.5
Emitter-base cutoff current (Collector open)
I
EBO
0.5
mA
Forward current transfer ratio
h
FE
35
Collector-emitter saturation voltage
V
CE(sat)
0.25
V
Output voltage high-level
V
OH
4.9
V
Output voltage low-level
V
OL
R
1
0.2
V
Input resistance
30%
10
+
30%
k
Resistance ratio
R
1
/ R
2
0.8
1.0
1.2
Transition frequency
f
T
V
CB
=
10 V, I
E
=
2 mA, f
=
200 MHz
150
MHz
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
=
10
μ
A, I
E
=
0
I
C
=
2 mA, I
B
=
0
V
CB
=
30 V, I
E
=
0
V
CE
=
30 V, I
B
=
0
V
EB
=
3 V, I
C
=
0
V
CE
=
10 V, I
C
=
5 mA
I
C
=
50 mA, I
B
=
0.33 mA
V
CC
=
5 V, V
B
=
0.5 V, R
L
=
1 k
V
CC
=
5 V, V
B
=
2.5 V, R
L
=
1 k
30
30
V
Collector-emitter voltage (Base open)
V
CEO
V
Collector-base cutoff current (Emitter open)
I
CBO
I
CEO
I
EBO
0.1
0.5
0.1
μ
A
μ
A
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
mA
Forward current transfer ratio
h
FE
80
Collector-emitter saturation voltage
V
CE(sat)
V
OH
1.2
V
Output voltage high-level
4.9
V
Output voltage low-level
V
OL
0.2
+
30%
V
Input resistance
R
1
30%
10
k
Resistance ratio
R
1
/ R
2
0.213
Transition frequency
f
T
V
CB
=
10 V, I
E
=
1 mA, f
=
200 MHz
80
MHz
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相关代理商/技术参数 |
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|---|---|
| UP0339700L | 功能描述:TRANS ARRAY NPN/PNP SS MINI-5P RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 阵列﹐预偏压式 系列:- 标准包装:3,000 系列:- 晶体管类型:1 个 NPN，1 个 PNP - 预偏压式（双） 电流 - 集电极 (Ic)（最大）:70mA，100mA 电压 - 集电极发射极击穿（最大）:50V 电阻器 - 基极 (R1)（欧）:47k，2.2k 电阻器 - 发射极 (R2)（欧）:47k 在某 Ic、Vce 时的最小直流电流增益 (hFE):70 @ 5mA，5V Ib、Ic条件下的Vce饱和度（最大）:300mV @ 500µA，10mA 电流 - 集电极截止（最大）:- 频率 - 转换:100MHz，200MHz 功率 - 最大:250mW 安装类型:表面贴装 封装/外壳:6-TSSOP，SC-88，SOT-363 供应商设备封装:PG-SOT363-6 包装:带卷 (TR) 其它名称:SP000784046 |
| UP03397G0L | 功能描述:TRANS ARRAY PNP/NPN W/RES SSMINI RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 阵列﹐预偏压式 系列:- 标准包装:3,000 系列:- 晶体管类型:1 个 NPN，1 个 PNP - 预偏压式（双） 电流 - 集电极 (Ic)（最大）:70mA，100mA 电压 - 集电极发射极击穿（最大）:50V 电阻器 - 基极 (R1)（欧）:47k，2.2k 电阻器 - 发射极 (R2)（欧）:47k 在某 Ic、Vce 时的最小直流电流增益 (hFE):70 @ 5mA，5V Ib、Ic条件下的Vce饱和度（最大）:300mV @ 500µA，10mA 电流 - 集电极截止（最大）:- 频率 - 转换:100MHz，200MHz 功率 - 最大:250mW 安装类型:表面贴装 封装/外壳:6-TSSOP，SC-88，SOT-363 供应商设备封装:PG-SOT363-6 包装:带卷 (TR) 其它名称:SP000784046 |
| UP0401S-24 | 制造商:UMEC International 功能描述: |
| UP0403A-01P | 制造商:UMEC International 功能描述:36W +5V +/-12VOUT |
| UP0403A-03P | 制造商:UMEC International 功能描述:36W +5V +/-15VOUT |
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