参数资料
型号: UPA104B
厂商: NEC Corp.
英文描述: HIGH FREQUENCY NPN TRANSISTOR ARRAY
中文描述: 高频NPN晶体管阵列
文件页数: 4/8页
文件大小: 65K
代理商: UPA104B
μ
PA104
4
Data Sheet P10709EJ2V0DS00
TYPICAL PERFORMANCE CHARACTERISTICS
(T
A
= +25
°
C)
10
8
6
4
2
00
1
2
3
4
5
Collector to Emitter Voltage, V
CE
(V)
I
B
= 20 A
100
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
20
10
0.4
Base to Emitter Voltage, V
BE
(V)
C
C
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
C
C
2
1
5
0.1
0.5
0.5 0.6 0.7 0.8 0.9 1.0
V
CE
= 3 V
1000
0.5
1
Collector Current, I
C
(mA)
2
DC CURRENT GAIN vs.
COLLECTOR CURRENT
12
10
8
6
4
1
G
T
Collector Current, I
C
(mA)
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
D
F
200
100
20
50
10
5
10
20
50
50
2
5
10
20
V
CE
= 5 V
3 V
1 V
100
50
20
10
01
G
Collector Current, I
C
(mA)
GAIN AND NOISE FIGURE OF
INDIVIDUAL TRANSISTOR
2
5
10
20
50 100
V
CC
= 3 V
f = 1 GHz
8
6
4
2
0
N
GAIN
NF
80
60
40
200
1.1
0
V
CE
= 3 V
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