参数资料
型号: UPA1800GR-9JG
厂商: NEC Corp.
英文描述: N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
中文描述: N沟道MOS场效应晶体管开关
文件页数: 3/8页
文件大小: 63K
代理商: UPA1800GR-9JG
Data Sheet D11407EJ1V0DS00
3
μ
PA1800
TYPICAL CHARACTERISTICS (T
A
= 25
°
C)
30
150
60
90
20
60
80
40
0
100
120
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
d
T
A
- Ambient Temperature -
C
FORWARD BIAS SAFE OPERATING AREA
10
100
I
D
1
V
DS
- Drain to Source Voltage - V
100
10
1
0.1
0.01
0.1
R
=
(@V
GS
10
V
100ms
DC
10
ms
PW
=
1ms
I
D
(pulse)
I
D(DC)
T
A
= 25
C
Single Pulse
Mounted on Ceramic
Substrate of 50cm x 1.1 mm
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
0.2
0
0.8
1.0
0.4
0.6
0
20
15
5
10
Pulsed
V
GS
= 4.5 V
V
GS
= 2.5 V
V
GS
= 4.0 V
100
10
1
0.1
0.01
0.001
0.0001
0
0.5
1
1.5
2
2.5
3
V
GS
- Gate to Source Voltage - V
V
DS
= 10 V
TRANSFER CHARACTERISTICS
I
D
T
A
= 125
C
75
C
25
C
25
C
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature -
C
V
G
V
DS
= 10 V
I
D
= 1
mA
50
50
100
0
150
1.5
2.0
1.0
0.5
1
10
100
0.01
0.1
V
DS
= 10 V
I
D
- Drain Current - A
|
f
25
C
75
C
125
C
1
10
0.1
0.01
0.001
100
FORWARD TRANSFER ADMMITTANCE vs.
DRAIN CURRENT
T
A
=
25
C
#
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