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参数资料
| 型号： | UPA2211T1M-T1-AT |
| 厂商： | Renesas Electronics America |
| 文件页数： | 4/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 12V 8VSOF-SLIM |
| 标准包装： | 3,000 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 12V |
| 电流 - 连续漏极(Id) @ 25° C： | 7.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 25 毫欧 @ 7.5A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 1mA |
| 闸电荷(Qg) @ Vgs： | 14.9nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 1350pF @ 10V |
| 功率 - 最大： | 1.1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-WSOF |
| 供应商设备封装： | 8-VSOF |
| 包装： | 带卷 (TR) |
μ PA2211T1M
ELECTRICAL CHARACTERISTICS (T A = 25 ° C, All terminals are connected.)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate to Source Cut-off Voltage
Note
Forward Transfer Admittance
SYMBOL
I DSS
I GSS
V GS(off)
| y fs |
TEST CONDITIONS
V DS = ? 12 V, V GS = 0 V
V GS = m 8 V, V DS = 0 V
V DS = ? 10 V, I D = ? 1 mA
V DS = ? 10 V, I D = ? 3.8 A
MIN.
? 0.45
5
TYP.
MAX.
-10
m 10
? 1.5
UNIT
μ A
μ A
V
S
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Note
R DS(on)1
R DS(on)2
R DS(on)3
C iss
C oss
C rss
t d(on)
t r
t d(off)
V GS = ? 4.5 V, I D = ? 7.5 A
V GS = ? 2.5 V, I D = ? 3.8 A
V GS = ? 1.8 V, I D = ? 3.8 A
V DS = ? 10 V,
V GS = 0 V,
f = 1 MHz
V DD = ? 10 V, I D = ? 3.8 A,
V GS = ? 4.0 V,
R G = 10 Ω
21
25
34
1350
255
215
10.7
16.7
101.0
25
34
66
m Ω
m Ω
m Ω
pF
pF
pF
ns
ns
ns
Fall Time
t f
76.4
ns
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Q G
Q GS
Q GD
V DD = ? 9.6 V,
V GS = ? 4.5 V,
I D = ? 7.5 A
14.9
2.8
4.0
nC
nC
nC
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Note
V F(S-D)
t rr
Q rr
I F = ? 7.5 A, V GS = 0 V
I F = ? 7.5 A, V GS = 0 V,
di/dt = ? 47 A/ μ s
0.88
60
19
1.2
V
ns
nC
Note Pulsed
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
PG.
R G
D.U.T.
R L
V DD
V GS
Wave Form
V GS ( ? )
10%
0
V GS
90%
PG.
D.U.T.
I G = ? 2 mA
50 Ω
R L
V DD
V DS ( ? )
90%
90%
V GS ( ? )
V DS
0
V DS
0
10%
10%
τ
Wave Form
t d(on)
t r
t d(off)
t f
τ = 1 μ s
Duty Cycle ≤ 1%
t on
t off
2
Data Sheet G19452EJ1V0DS
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