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参数资料
| 型号： | uPA2450CTL-E1-A |
| 厂商： | NEC Corp. |
| 英文描述： | MOS FIELD EFFECT TRANSISTOR |
| 中文描述： | MOS场效应管 |
| 文件页数： | 7/8页 |
| 文件大小： | 166K |
| 代理商： | UPA2450CTL-E1-A |
Data Sheet G18792EJ1V0DS
7
μ
PA2450C
5. This device is very thin device and should be handled with caution for mechanical stress. The rate of distortion
applied to the device should become below 2000
μ
.
Note1
If the rate of distortion exceeds 2000
μ
, the characteristic
of a device may be degraded and it may result in failure.
Figure 2. Direction of substrate and stress
The substrate that mounted the device is on a stand with a support width of 24 mm.
The device is turned downward. The stress is applied from a top.
Measurement position
Stress
Support width 24 mm
Substrate: 33 x 6 mm, t = 0.5 mm, FR-4
The direction of a device:
Device
Bend
Figure 3. Example of the bend and the rate of distortion
Note2
00
0.2
0.4
0.6
0.8
1
1000
2000
3000
4000
5000
6000
Bend - mm
T
μ
ε
Recommended condition
Note 1.
Definition of rate of distortion(written as
ε
in this document)
ε
= (l
l
0
)/l
0
l
0
: Distance for two arbitrary points before receiving stress.
l: Distance above-mentioned when receiving stress.
2.
The relation of the distortion and the bend changes with several conditions, such as a size of substrate and
so on.
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|---|---|
| uPA2450CTL-E2-A | MOS FIELD EFFECT TRANSISTOR |
| UPA2451C | MOS FIELD EFFECT TRANSISTOR |
| uPA2451CTL-E1-A | MOS FIELD EFFECT TRANSISTOR |
| uPA2451CTL-E2-A | MOS FIELD EFFECT TRANSISTOR |
| UPA2510TM | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
相关代理商/技术参数 |
参数描述 |
|---|---|
| UPA2450CTL-E2-A | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| UPA2450TL | 制造商:NEC 制造商全称:NEC 功能描述:N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA2450TL-E2 | 制造商:Renesas Electronics Corporation 功能描述: |
| UPA2451 | 制造商:NEC 制造商全称:NEC 功能描述:N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA2451B | 制造商:NEC 制造商全称:NEC 功能描述:N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
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