参数资料
型号: uPA2451CTL-E2-A
厂商: NEC Corp.
英文描述: MOS FIELD EFFECT TRANSISTOR
中文描述: MOS场效应管
文件页数: 3/8页
文件大小: 179K
代理商: UPA2451CTL-E2-A
Data Sheet G18793EJ1V0DS
3
μ
PA2451C
ELECTRICAL CHARACTERISTICS (T
A
= 25
°
C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
T
A
- Ambient Temperature -
°
C
T
0
0.5
1
1.5
2
2.5
3
0
25
50
75
100
125
150
175
Mounted on ceramic board of
50 cm
2
x 1.1 mmt, 2 units
Mounted on FR-4 board of
50 cm
2
x 1.1 mmt, 2 units
T
A
- Ambient Temperature -
°
C
FORWARD BIAS SAFE OPERATING AREA
D
0.01
0.1
1
10
100
1000
0.1
1
10
100
I
D(pulse)
I
D(DC)
Single Pulse
Mounted on ceramic board of
50 cm
2
x 1.1 mmt
P
D
(FET1):P
D
(FET2) = 1:1
1
00 m
1
m
i
s
i
s
1
0 m
i
s
PW =1
0
μ
s
R
DS(on)
Lmted
(V
GS
=4.5V)
DC (2 unts)
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
t
°
C
0.1
1 m 10 m 100 m 1 10 100 1000
1
10
100
1000
Single Pulse
P
D
(FET1):P
D
(FET2) = 1:1
Mounted on ceramic board of
50 cm
2
x 1.1 mmt
Mounted on FR-4 board of
50 cm
2
x 1.1 mmt
PW - Pulse Width - s
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