参数资料
型号: UPA2650T1E
厂商: NEC Corp.
英文描述: MOS FIELD EFFECT TRANSISTOR
中文描述: MOS场效应管
文件页数: 4/9页
文件大小: 208K
代理商: UPA2650T1E
Data Sheet G18749EJ1V0DS
4
μ
PA2650T1E
MOSFET TYPICAL CHARACTERISTICS (T
A
= 25
°
C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
T
A
- Ambient Temperature -
°
C
T
0
0.4
0.8
1.2
1.6
0
25
50
75
100
125
150
175
Mounted on FR-4 board of
1452 mm
2
x 1.6 mmt
T
A
- Ambient Temperature -
°
C
FORWARD BIAS SAFE OPERATING AREA
D
0.01
0.1
1
10
100
0.1
1
10
100
I
D(pulse)
Single Pulse
Mounted on FR-4 board of
1452 mm
2
x 1.6 mmt
PW =1
m
i
s
1
0 m
i
s
DC
I
D(DC)
R
DSon)
Lmted
(V
GS
=4.5V)
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
t
°
C
0.1
100
μ
1 m 10 m 100 m 1 10 100 1000
1
10
100
1000
MOSFET1, 2
Single Pulse
Mounted on FR-4 board of 1452 mm
2
x 1.6 mmt
Cu pad of 645 mm
2
x 70
μ
m (1 in
2
)
PW - Pulse Width - s
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