- 您现在的位置：买卖IC网 > PDF目录376421 > UPA2719GR (NEC Corp.) SWITCHING P-CHANNEL POWER MOSFET PDF资料下载
参数资料
| 型号： | UPA2719GR |
| 厂商： | NEC Corp. |
| 英文描述： | SWITCHING P-CHANNEL POWER MOSFET |
| 中文描述： | 开关的P -沟道功率MOSFET |
| 文件页数： | 3/7页 |
| 文件大小： | 140K |
| 代理商： | UPA2719GR |
Data Sheet G16953EJ1V0DS
3
μ
PA2719GR
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
d
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
T
A
- Ambient Temperature -
°
C
P
T
0
0.4
0.8
1.2
1.6
2
2.4
2.8
0
25
50
75
100
125
150
175
Mounted on ceramic
substrate of
1200 mm
2
x 2.2 mm
T
A
- Ambient Temperature -
°
C
FORWARD BIAS SAFE OPERATING AREA
I
D
-0.01
-0.1
-1
-10
-100
-1000
-0.01
-0.1
-1
-10
-100
I
D(pulse)
10 ms
Power Dissipation Limited
I
D(DC)
PW = 100
μ
s
1 ms
DC
R
DS(on)
Limited
(at V
GS
=
10 V)
100 ms
T
A
= 25°C
Single pulse
Mounted on ceramic substrate of
1200 mm
2
x 2.2 mm
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
t
°
C
0.1
100
μ
1
10
100
1000
Single pulse, T
A
= 25°C
R
th(ch-A)1
: Mounted on ceramic substrate of 1200 mm
2
x 2.2 mm
R
th(ch-A)2
: Mounted on glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mm
R
th(ch-A)2
R
th(ch-A)1
PW - Pulse Width - s
1 m
10 m
100 m
1
10
100
1000
相关PDF资料 |
PDF描述 |
|---|---|
| UPA2727UT1A | MOS FIELD EFFECT TRANSISTOR |
| uPA2727UT1A-E1-AY | MOS FIELD EFFECT TRANSISTOR |
| uPA2727UT1A-E1-AZ | MOS FIELD EFFECT TRANSISTOR |
| uPA2727UT1A-E2-AY | MOS FIELD EFFECT TRANSISTOR |
| uPA2727UT1A-E2-AZ | MOS FIELD EFFECT TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| UPA2719GR-E1 | 制造商:Renesas Electronics Corporation 功能描述: |
| UPA2720AGR-E1-AT | 制造商:Renesas Electronics Corporation 功能描述: |
| UPA2720AGR-E2-AT | 制造商:Renesas Electronics Corporation 功能描述: |
| UPA2721AGR-E1-AT | 制造商:Renesas Electronics Corporation 功能描述:Cut Tape |
| UPA2724UT1A-E2 | 制造商:Renesas Electronics Corporation 功能描述: |
发布紧急采购，3分钟左右您将得到回复。