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参数资料
| 型号： | UPA621TT-E1-A |
| 厂商： | Renesas Electronics America |
| 文件页数： | 3/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 20V 6-WSOF |
| 标准包装： | 3,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 50 毫欧 @ 2.5A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 1mA |
| 闸电荷(Qg) @ Vgs： | 3.3nC @ 4V |
| 输入电容 (Ciss) @ Vds： | 270pF @ 10V |
| 功率 - 最大： | 200mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-WSOF |
| 供应商设备封装： | 6-WSOF |
| 包装： | 带卷 (TR) |
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
μ PA621TT
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The μ PA621TT is a switching device, which can be driven directly by a
2.5 V power source.
This device features a low on-state resistance and excellent switching
PACKAGE DRAWING (Unit: mm)
2.0 ±0.2
characteristics, and is suitable for applications such as power switch of
6
5
4
portable machine and so on.
0 ~ 0.05
FEATURES
?
2.5 V drive available
1
2
3
?
Low on-state resistance
R DS(on)1 = 50 m ? MAX. (V GS = 4.5 V, I D = 2.5 A)
0.65
0.65
S
R DS(on)2 = 53 m ? MAX. (V GS = 4.0 V, I D = 2.5 A)
R DS(on)3 = 79 m ? MAX. (V GS = 2.5 V, I D = 2.5 A)
MAX. 0.8
ORDERING INFORMATION
PART NUMBER
PACKAGE
0.05 S
μ PA621TT
Marking: WB
6pinWSOF (1620)
1,2,5,6 : Drain
3 : Gate
4 : Source
ABSOLUTE MAXIMUM RATINGS (T A = 25°C)
Drain to Source Voltage (V GS = 0 V)
V DSS
20
V
Gate to Source Voltage (V DS = 0 V)
Drain Current (DC) (T A = 25°C)
V GSS
I D(DC)
± 12
± 5.0
V
A
? 0.05
0.2 +0.1
0.1 M S
Drain Current (pulse)
Note1
I D(pulse)
± 20
A
EQUIVALENT CIRCUIT
Total Power Dissipation
P T1
0.2
W
Total Power Dissipation
Channel Temperature
Note2
P T2
T ch
1.4
150
W
°C
Drain
Storage Temperature
T stg
? 55 to +150
°C
Gate
Body
Diode
Notes 1. PW ≤ 10 μ s, Duty Cycle ≤ 1%
Gate
2. Mounted on FR-4 board, t ≤ 5 sec.
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. G16112EJ1V0DS00 (1st edition)
Date Published June 2002 NS CP(K)
Printed in Japan
?
2002
相关PDF资料 |
PDF描述 |
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| 445W35H12M00000 | CRYSTAL 12.000000 MHZ 32PF SMD |
| 445W35G30M00000 | CRYSTAL 30.000000 MHZ 30PF SMD |
| 445W35G27M00000 | CRYSTAL 27.000000 MHZ 30PF SMD |
| 445W35G25M00000 | CRYSTAL 25.000000 MHZ 30PF SMD |
| 445W35G24M57600 | CRYSTAL 24.576000 MHZ 30PF SMD |
相关代理商/技术参数 |
参数描述 |
|---|---|
| UPA621TT-E2-A | 功能描述:MOSFET N-CH 20V 6-WSOF RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| UPA622 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:UPA622TT Data Sheet | Data Sheet[09/2002] |
| UPA622TT | 制造商:NEC 制造商全称:NEC 功能描述:N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA622TT-E1 | 制造商:Renesas Electronics Corporation 功能描述: |
| UPA622TT-E1-A | 功能描述:MOSFET N-CH 30V 6-WSOF RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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