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参数资料
| 型号： | UPA622TT-E1-A |
| 厂商： | NEC Corp. |
| 英文描述： | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| 中文描述： | N沟道MOS场效应晶体管开关 |
| 文件页数： | 1/7页 |
| 文件大小： | 149K |
| 代理商： | UPA622TT-E1-A |
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MOS FIELD EFFECT TRANSISTOR
μ
PA622TT
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DATA SHEET
Document No. G16113EJ2V0DS00 (2nd edition)
Date Published May 2005 NS CP(K)
Printed in Japan
2002
The mark
shows major revised points.
DESCRIPTION
The
μ
PA622TT is a switching device which can be driven
directly by a 4.0 V power source.
This device features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such as
power switch of portable machine and so on.
FEATURES
4.0 V drive available
Low on-state resistance
R
DS(on)1
= 82 m
MAX. (V
GS
= 10 V, I
D
= 1.5 A)
R
DS(on)2
= 120 m
MAX. (V
GS
= 4.5 V, I
D
= 1.0 A)
R
DS(on)3
= 139 m
MAX. (V
GS
= 4.0 V, I
D
= 1.0 A)
ORDERING INFORMATION
PART NUMBER
PACKAGE
μ
PA622TT-E1-A
μ
PA622TT-E2-A
6 pin WSOF (1620)
Remark
"-A" indicates Pb-free (This product does not contain Pb
in external electrode and other parts.).
"-E1" or "-E2" indicates the unit orientation.
(8 mm embossed carrier tape, 3000 pcs/reel)
Marking: WC
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC)
Note1
Drain Current (pulse)
Note2
Total Power Dissipation
Total Power Dissipation
Note1
Channel Temperature
Storage Temperature
Notes 1.
Mounted on FR-4 board of 5000 mm
2
x 1.1 mm, t
≤
5
sec.
2.
PW
≤
10
μ
s, Duty Cycle
≤
1%
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
30
±
20
±
3.0
±
12
0.2
1.3
150
V
V
A
A
W
W
°C
°C
–55 to +150
PACKAGE DRAWING (Unit: mm)
2.0 ±0.2
2
0.65
0.65
0.8 MAX.
0 to 0.05
0
0
+
0
0.2
+0.1
0.05
0
1
S
0.05
M S
0.1
S
1, 2, 5, 6: Drain
3 : Gate
4 : Source
1
2
3
6
5
4
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
相关PDF资料 |
PDF描述 |
|---|---|
| UPA622TT | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA622TT-E2-A | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA800T-T1 | HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD |
| UPA800T | HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD |
| UPA800TF | NPN SILICON HIGH FREQUENCY TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| UPA622TT-E2-A | 功能描述:MOSFET N-CH 30V 6-WSOF RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| UPA64H | 制造商:NEC 制造商全称:NEC 功能描述:High Speed Switching |
| UPA650 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:UPA650TT Data Sheet | Data Sheet[05/2002] |
| UPA650TT | 制造商:NEC 制造商全称:NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA650TT-E1-A | 功能描述:MOSFET P-CH 12V 6-WSOF RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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