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参数资料
| 型号： | UPA677TB-T1-A |
| 厂商： | Renesas Electronics America |
| 文件页数： | 3/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET DL N-CH 20V SC-88 6SSP |
| 标准包装： | 1 |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 350mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 570 毫欧 @ 300mA，4.5V |
| 输入电容 (Ciss) @ Vds： | 28pF @ 10V |
| 功率 - 最大： | 200mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-TSSOP，SC-88，SOT-363 |
| 供应商设备封装： | SC-88 |
| 包装： | 标准包装 |
| 其它名称： | UPA677TB-T1-ADKR |
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
μ PA677TB
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The μ PA677TB is a switching device which can be driven
PACKAGE DRAWING (Unit: mm)
0.2 - 0
0.15 - 0.05
directly by a 2.5 V power source.
The μ PA677TB features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such as
+0.1
+0.1
power switch of portable machine and so on.
FEATURES
? 2.5 V drive available
6
1
5
2
4
3
0 to 0.1
? Low on-state resistance
R DS(on)1 = 0.57 ? MAX. (V GS = 4.5 V, I D = 0.30 A)
R DS(on)2 = 0.60 ? MAX. (V GS = 4.0 V, I D = 0.30 A)
R DS(on)3 = 0.88 ? MAX. (V GS = 2.5 V, I D = 0.15 A)
? Two MOS FET circuits in same size package as SC-70
ORDERING INFORMATION
PART NUMBER
PACKAGE
μ PA677TB
SC-88 (SSP)
Marking: WA
0.65 0.65
1.3
2.0 ±0.2
0.7
0.9 ±0.1
ABSOLUTE MAXIMUM RATINGS (T A = 25°C)
PIN CONNECTUON (Top View)
Drain to Source Voltage (V GS = 0 V)
V DSS
20
V
6
5
4
Gate to Source Voltage (V DS = 0 V)
Drain Current (DC)
V GSS
I D(DC)
±12
±0.35
V
A
Drain Current (pulse)
Note1
Total Power Dissipation(2units)
Channel Temperature
Storage Temperature
Note2
I D(pulse)
P T
T ch
T stg
±1.40
0.2
150
? 55 to +150
A
W
°C
°C
1:
2:
3:
4:
5:
6:
Source 1
Gate 1
Drain 2
Source 2
Gate 2
Drain 1
Notes 1. PW ≤ 10 μ s, Duty Cycle ≤ 1%
1
2
3
2. Mounted on FR-4 Board of 2500 mm x 1.1 mm 2units total.
2
Remark
Caution
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
This product is electrostatic-sensitive device due to low ESD capability and should be handled with
caution for electrostatic discharge.
V ESD = ±200 V TYP. (C = 200 pF, R = 0 ? , Single pulse)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G16598EJ1V0DS00 (1st edition)
Date Published March 2003 NS CP(K)
Printed in Japan
2003
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相关代理商/技术参数 |
参数描述 |
|---|---|
| UPA677TB-T2-A | 功能描述:MOSFET N-CH DUAL 20V SC-70 RoHS:是 类别:分离式半导体产品 >> FET - 阵列 系列:- 产品目录绘图:8-SOIC Mosfet Package 标准包装:1 系列:- FET 型:2 个 N 沟道（双） FET 特点:逻辑电平门 漏极至源极电压(Vdss):60V 电流 - 连续漏极(Id) @ 25° C:3A 开态Rds（最大）@ Id, Vgs @ 25° C:75 毫欧 @ 4.6A，10V Id 时的 Vgs(th)（最大）:3V @ 250µA 闸电荷(Qg) @ Vgs:20nC @ 10V 输入电容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安装类型:表面贴装 封装/外壳:PowerPAK? SO-8 供应商设备封装:PowerPAK? SO-8 包装:Digi-Reel® 产品目录页面:1664 (CN2011-ZH PDF) 其它名称:SI7948DP-T1-GE3DKR |
| UPA678TB | 制造商:NEC 制造商全称:NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA678TB-T1-A | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 20V 0.25A 6-Pin SC-88 T/R 制造商:Renesas Electronics Corporation 功能描述:TRANS MOSFET P-CH 20V 0.25A 6PIN SC-88 - Tape and Reel |
| UPA678TB-T2-A | 功能描述:MOSFET P-CH DUAL 20V SC-70 RoHS:是 类别:分离式半导体产品 >> FET - 阵列 系列:- 产品目录绘图:8-SOIC Mosfet Package 标准包装:1 系列:- FET 型:2 个 N 沟道（双） FET 特点:逻辑电平门 漏极至源极电压(Vdss):60V 电流 - 连续漏极(Id) @ 25° C:3A 开态Rds（最大）@ Id, Vgs @ 25° C:75 毫欧 @ 4.6A，10V Id 时的 Vgs(th)（最大）:3V @ 250µA 闸电荷(Qg) @ Vgs:20nC @ 10V 输入电容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安装类型:表面贴装 封装/外壳:PowerPAK? SO-8 供应商设备封装:PowerPAK? SO-8 包装:Digi-Reel® 产品目录页面:1664 (CN2011-ZH PDF) 其它名称:SI7948DP-T1-GE3DKR |
| UPA679TB | 制造商:NEC 制造商全称:NEC 功能描述:N/P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
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