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参数资料
| 型号： | UPC2712TB-EVAL |
| 厂商： | CEL |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | EVAL BOARD FOR UPC2712TB |
| 标准包装： | 1 |
| 类型： | 放大器，MMIC |
| 频率： | 2.2GHz ~ 2.6GHz |
| 适用于相关产品： | UPC2712TB |
| 已供物品： | 板 |
UPC2711TB, UPC2712TB
BIPOLAR ANALOG INTEGRATED CIRCUITS
5 V, SUPER MINIMOLD
SILICON MMIC WIDEBAND AMPLIFIER
FEATURES
TYPICAL PERFORMANCE CURVES
? HIGH DENSITY SURFACE MOUNTING:
6 pin super minimold or SOT- 363 package
? SUPPLY VOLTAGE: V CC = 4.5 to 5.5 V
? WIDEBAND RESPONSE:
UPC2711TB: fu = 2.9 GHz TYP
UPC2712TB: fu = 2.6 GHz TYP
? POWER GAIN:
UPC2711TB: G P = 13 dB TYP
UPC2712TB: G P = 20 dB TYP
25
20
15
GAIN vs. FREQUENCY
UPC2712TB
UPC2711TB
DESCRIPTION
The UPC2711TB and UPC2712TB are Silicon MMIC
Wideband Amplifiers manufactured using NEC's 20 GHz f T
NESAT TM III silicon bipolar process. These devices are de-
signed for use as buffer amps in DBS tuners. The UPC2711/
12TB are pin compatible and have comparable performance
as the larger UPC2711/12T, so they are suitable for use as a
replacement to help reduce system size. These IC's are
housed in a 6 pin super minimold or SOT-363 package.
10
5
0.5
1.0 1.5 2.0
Frequency, f (GHz)
2.5
3.0
Stringent quality assurance and test procedure ensure
the highest reliability and performance.
ELECTRICAL CHARACTERISTICS (T A = +25 ° C, V CC = 5.0 V, Z L = Z S = 50 W)
P A R T N U M B E R
P A C K A G E O U T L I N E
U P C 2 7 1 1 T B
S 0 6
U P C 2 7 1 2 T B
S 0 6
SYMBOLS
I CC
G P
f U
PARAMETERS AND CONDITIONS
C i r c u i t C u r r e n t ( n o s i g n a l )
P o w e r G a i n , f = 1 G H z
Upper Limit Operating Frequency
(The gain at f U is 3 dB down from the gain at 100 MHz)
UNITS
m A
d B
GHz
MIN
9
1 1
2.7
TYP
1 2
1 3
2.9
MAX
1 5
1 6 . 5
MIN
9
1 8
2.2
TYP
1 2
2 0
2.6
MAX
1 5
2 3 . 5
Δ G P
G a i n F l a t n e s s , f = 0 . 1 G H z t o 2 . 5 G H z
d B
± 0.8
± 0.8
P O (SAT)
Maximum Output Level, f = 1 GHz, P IN = 0 dBm
dBm
-2
+1
0
+3
N F
N o i s e F i g u r e , f = 1 G H z
d B
5
6 . 5
4 . 5
6
RL IN
RL OUT
I S O L
I n p u t R e t u r n L o s s , f = 1 G H z
O u t p u t R e t u r n L o s s , f = 1 G H z
I s o l a t i o n , f = 1 G H z
d B
d B
d B
2 0
9
2 5
2 5
1 2
3 0
9
1 0
2 8
1 2
1 3
3 3
The information in this document is subject to change without notice. Before using this document, please confirm
that this is the latest version.
Date Published: June 22, 2005
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相关代理商/技术参数 |
参数描述 |
|---|---|
| UPC2712TE3 | 制造商:California Eastern Laboratories (CEL) 功能描述:RF Amp Chip Single GP 2.6GHz 5.5V 6-Pin Super Mini-Mold T/R |
| UPC2712T-E3 | 功能描述:射频放大器 RoHS:否 制造商:Skyworks Solutions, Inc. 类型:Low Noise Amplifier 工作频率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 输出截获点:37.5 dBm 功率增益类型:32 dB 噪声系数:0.85 dB 工作电源电压:5 V 电源电流:125 mA 测试频率:2.6 GHz 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:QFN-16 封装:Reel |
| UPC2713 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Analog IC |
| UPC2713T | 制造商:NEC 制造商全称:NEC 功能描述:1.2 GHz LOW NOISE WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT |
| UPC2713T-E3 | 功能描述:射频放大器 DISC BY CEL 2/01 SO-6 WB AMP MMIC RoHS:否 制造商:Skyworks Solutions, Inc. 类型:Low Noise Amplifier 工作频率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 输出截获点:37.5 dBm 功率增益类型:32 dB 噪声系数:0.85 dB 工作电源电压:5 V 电源电流:125 mA 测试频率:2.6 GHz 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:QFN-16 封装:Reel |
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