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| 型号： | UPC2726T-E3 |
| 厂商： | CEL |
| 文件页数： | 1/4页 |
| 文件大小： | 0K |
| 描述： | IC 1.6GHZ DIFFEREN MMIC AMP TO6 |
| 标准包装： | 3,000 |
| 频率： | 1.0GHz ~ 1.6GHz |
| 增益： | 11dB ~ 17dB |
| 噪音数据： | 4.5dB ~ 6dB |
| RF 型： | 手机，DBS，PCS |
| 电源电压： | 4.5 V ~ 5.5 V |
| 电流 - 电源： | 8mA ~ 15mA |
| 封装/外壳： | SOT-23-6 细型，TSOT-23-6 |
| 包装： | 带卷 (TR) |
| 其它名称： | Q718562 UPC2726T UPC2726T-ND UPC2726TTR |
1.6 GHz DIFFERENTIAL
WIDEBAND SILICON
RFIC AMPLIFIER
UPC2726T
FEATURES
NOISE FIGURE AND GAIN
vs. FREQUENCY AND VOLTAGE
? HIGH GAIN: 15 dB Typical at 400 MHz
20
G P
V CC = 5.0 V
? WIDEBAND FREQUENCY RESPONSE: 1.6 GHz TYP
? SINGLE POSITIVE DC SUPPLY
? SUPER SMALL PACKAGE
? TAPE AND REEL PACKAGING OPTION AVAILABLE
10
2.0 V
3.0 V
0
9
7
DESCRIPTION
The UPC2726T is a Silicon RF Integrated Citrcuit which is
NF
V CC = 2.0 V
V CC = 4.5--5.5 V
5
3
manufactured using the NESAT III process. The NESAT III
process produces transistors with f T approaching 20 GHz.
This amplifier was designed as a buffer amplifier for circuits
requiring differential inputs and outputs for increased common-
0.1
0.3 1.0
Frequency, f (GHz)
2.0
3.0
1
mode rejection.
GAIN vs. FREQUENCY
NEC's stringent quality assurance and test procedures ensure
the highest reliability and performance.
20
15
10
AND TEMPERATURE
-40 ° C
25 ° C
85 ° C
V CC = 5.0 V
5
0.1
0.3
1.0
2.0
3.0
Frequency, f (GHz)
ELECTRICAL CHARACTERISTICS (T A = 25 ° C, Z L = Z S = 50 ? , f = 400 MHz)
PART NUMBER
PACKAGE OUTLINE
V CC = 5 V
UPC2726T
V CC = 2 V
SYMBOLS
I CC
G S
PARAMETERS AND CONDITIONS
Circuit Current, (No Signal)
Small Signal Gain
UNITS
mA
dB
MIN
8
11
TYP
11.5
15
MAX
15
17
MIN
TYP
2.5
4.5
MAX
NF
Noise Figure
dB
4.5
6
5.1
fu
Upper limit Operating
Frequency 1
GHz
1.0
1.6
2.4
P SAT
RL IN
RL OUT
ISOL
OIP 3
Saturated Output Power
Input Return Loss
Output Return Loss
Isolation
Output 3rd Order Intercept Point 2
dBm
dB
dB
dB
dBm
-5
-2
2
4
60
-2.5
-14
1
4
58
-10
Notes:
1. The Gain at fu is 3 dB down from the gain at 400 MHz.
2. f 1 = 400 MHz, f 2 = 402 MHz, single side band.
California Eastern Laboratories
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