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参数资料
| 型号： | UPC8151TB-EV19 |
| 厂商： | CEL |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | EVAL BOARD FOR UPC8151 1.9GHZ |
| 标准包装： | 1 |
| 类型： | 放大器，MMIC |
| 频率： | 100MHz ~ 1.9GHz |
| 适用于相关产品： | UPC8151TB@1.9GHz |
| 已供物品： | 板 |
UPC8151TB
BIPOLAR ANALOG INTEGRATED CIRCUIT
SILICON RFIC LOW CURRENT AMPLIFIER
FOR CELLULAR/CORDLESS TELEPHONES
V CC = 3.0 V V CC = 2.4 V
FEATURES
? SUPPLY VOLTAGE: Vcc = 2.4 to 3.3 V
? LOW CURRENT CONSUMPTION:
UPC8151TB; Icc = 4.2 mA TYP @ 3.0 V
? HIGH EFFICIENCY:
UPC8151TB; P 1dB = +2.5 dBm TYP @ f = 1 GHz
? POWER GAIN:
UPC8151TB; G P = 12.5 dB TYP @ f = 1 GHz
? OPERATING FREQUENCY:
100 MHz to 1900 MHz (Output port LC matching)
? EXCELLENT ISOLATION:
UPC8151TB; ISOL = 38 dB TYP @ f = 1 GHz
? HIGH DENSITY SURFACE MOUNTING:
6 pin super minimold or SOT-363 package
INSERTION POWER GAIN vs.
FREQUENCY AND VOLTAGE
+20
Tuned at 1 GHz
V CC = 3.3 V
+10
0
-10
0.3 1.0 3.0
Frequency, f (GHz)
DESCRIPTION
The UPC8151TB is a silicon RFIC designed as a buffer
amplifier for cellular or cordless telephones. This low current
amplifier operates on 3.0 V and is housed in a 6 pin super
minimold package.
The IC is manufactured using the 20 GHz f T NESAT? III
silicon bipolar process. This process uses silicon nitride
passivation film and gold electrodes. These materials protect
the chip surface from external pollution and prevent corrosion/
migration. Thus, this IC has excellent performance, uniformity
and reliability.
Tuned at 1.9 GHz
V CC = 3.0 V
V CC = 3.3 V
Frequency, f (GHz)
ELECTRICAL CHARACTERISTICS (T A = 25 ° C, V CC = V OUT = 3.0 V, Z L = Z S = 50 Ω , at LC matched frequency)
P A R T N U M B E R
P A C K A G E O U T L I N E
U P C 8 1 5 1 T B
S O 6
S Y M B O L S
I c c
P A R A M E T E R S A N D C O N D I T I O N S
C i r c u i t C u r r e n t , N o s i g n a l
U N I T S
m A
M I N
2 . 8
T Y P
4 . 2
M A X
5 . 8
G P
I S O L
P o w e r G a i n
I s o l a t i o n
f = 1 . 0 0 G H z
f = 1 . 9 0 G H z
f = 1 . 0 0 G H z
f = 1 . 9 0 G H z
d B
d B
9 . 5
1 2 . 0
3 3 . 0
2 9 . 0
1 2 . 5
1 5 . 0
3 8 . 0
3 4 . 0
1 4 . 5
1 7 . 0
–
–
P 1dB
Output Power at 1 dB Compression Point
f = 1 . 0 0 G H z
f = 1 . 9 0 G H z
d B m
- 1 . 0
- 3 . 0
+ 2 . 5
+ 0 . 5
–
–
N F
N o i s e F i g u r e
f = 1 . 0 0 G H z
f = 1 . 9 0 G H z
d B
–
–
6 . 0
6 . 0
7 . 5
7 . 5
RL IN
RL OUT
IM 3
Input Return Loss(without matching circuit)
f = 1 . 0 0 G H z
f = 1 . 9 0 G H z
Output Return Loss (with external matching circuit)
f = 1 . 0 0 G H z
f = 1 . 9 0 G H z
3rd Order Intermodulation Distortion
f 1 = 1.000 GHz, f 2 = 1.001 GHz, P O(each) = - 2 0 d B m
f 1 = 1.900 GHz, f 2 = 1.901 GHz, P O(each) = - 2 0 d B m
d B
d B
d B c
2 . 0
1 . 0
5 . 0
4 . 0
1 0 . 0
1 2 . 0
- 6 2 . 0
5 4 . 0
–
–
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相关代理商/技术参数 |
参数描述 |
|---|---|
| UPC8152TA | 制造商:NEC 制造商全称:NEC 功能描述:SILICON MMIC LOW CURRENT AMPLIFIERS FOR CELLULAR/CORDLESS TELEPHONES |
| UPC8152TA-E3 | 制造商:NEC 制造商全称:NEC 功能描述:SILICON MMIC LOW CURRENT AMPLIFIERS FOR CELLULAR/CORDLESS TELEPHONES |
| UPC8152TB | 制造商:NEC 制造商全称:NEC 功能描述:SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS |
| UPC8152TB-E3 | 功能描述:射频放大器 Low Current Amplifer RoHS:否 制造商:Skyworks Solutions, Inc. 类型:Low Noise Amplifier 工作频率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 输出截获点:37.5 dBm 功率增益类型:32 dB 噪声系数:0.85 dB 工作电源电压:5 V 电源电流:125 mA 测试频率:2.6 GHz 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:QFN-16 封装:Reel |
| UPC8158 | 制造商:NEC 制造商全称:NEC 功能描述:RF UP-CONVERTER WITH AGC FUNCTION + IF QUADRATURE MODULATOR IC FOR DIGITAL MOBILE COMMUNICATION SYSTEMS |
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