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参数资料
| 型号： | UPD5702TU-EV09 |
| 厂商： | CEL |
| 文件页数： | 3/10页 |
| 文件大小： | 0K |
| 描述： | EVAL BOARD UPD5702TU 900MHZ |
| 标准包装： | 1 |
| 类型： | MOSFET |
| 适用于相关产品： | UPD5702TU@900MHz |
| 已供物品： | 板 |
μ PD5702TU
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current of Q1
Drain Current of Q2
Symbol
V DS
V GS
I ds1
I ds2
T A = +25 ° C
T A = +25 ° C
T A = +25 ° C
T A = +25 ° C
Test Conditions
Ratings
8.0
8.0
45
259
Unit
V
V
mA
mA
Total Power Dissipation
Channel Temperature
Storage Temperature
Operating Ambient Temperature
Maximum Input Power to Q1
Maximum Input Power to Q2
P D
T ch
T stg
T A
P in1
P in2
T A = +85 ° C
T A = +25 ° C
T A = +25 ° C
Note
4.33
150
? 65 to +150
? 40 to +85
6
16
W
° C
° C
° C
dBm
dBm
Note Mounted on 33 × 21 mm epoxy glass PWB
RECOMMENDED OPERATING RANGE
Parameter
Drain to Source Voltage
Gate to Source Voltage
Maximum Input Power to Q1
Maximum Input Power to Q2
Symbol
V DS
V GS
P in1
P in2
Test Conditions
T A = +25 ° C
T A = +25 ° C
V DS = 3V, T A = +25 ° C
V DS = 3V, T A = +25 ° C
MIN.
2.7
0
TYP.
3.0
2.0
2.0
11.0
MAX.
3.5
2.5
5.0
15.0
Unit
V
V
dBm
dBm
ELECTRICAL CHARACTERISTICS
(f = 1.9 GHz, V DS = 3.0 V, T A = +25 ° C, unless otherwise specified, using our standard test fixture.)
I DS
Parameter
Gate to Source Voltage
Power Added Efficiency
Drain Current
Input Return Loss
Output Return Loss
Output Power
Power Gain
Linear Gain
Adjacent Channel Power Leakage
Symbol
V GS
PAE
Note
IRL
ORL
P out
G P
G L
P adj1
Test Conditions
P in = ? 5 dBm
P out = +21.0 dBm
P in = ? 20 dBm
P in = ? 5 dBm
P in = ? 20 dBm
P in = ? 5 dBm, ? 600 kHz
MIN.
1.0
?
?
?
?
21.0
26.0
?
?
TYP.
1.9
28.0
155
10
8
?
?
26.5
? 60.0
MAX.
2.5
?
230
?
?
?
?
?
? 55.0
Unit
V
%
mA
dB
dB
dBm
dB
dB
dBc
1
Adjacent Channel Power Leakage
P adj2
P in = ? 5 dBm, ? 900 kHz
?
? 70.0
? 60
dBc
2
Occupied Band Width
OBW
P in = ? 5 dBm
?
250
?
kHz
Note I DS is total Drain currents of Q1 and Q2 part.
Preliminary Data Sheet PU10455EJ01V0DS
3
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