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参数资料
| 型号： | UPFS120P |
| 厂商： | MICROSEMI CORP-LOWELL |
| 元件分类： | 小信号晶体管 |
| 英文描述： | P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件页数： | 1/3页 |
| 文件大小： | 250K |
| 代理商： | UPFS120P |
MSC 10-1-00
UPFS120P
580 Pleasant Street
Watertown, MA 02472
Phone:(617) 926-0404
F A X : (617) 924-1235
Features
POWERMITE 3 Surface Mount Package
SURFACE MOUNT
P – CHANNEL
MOSKEY
MOSFET with Schottky Rectifier for reverse voltage blocking
Single 3 leaded device replaces 2 individual components
Integral Heat Sink / Locking Tabs
Supplied in 16mm Tape and Reel – 6000 units/reel
Superior Low Thermal and Electrical capability
Mechanical Characteristics
Footprint Area of 16.51 mm2
Case: Molded Epoxy
Meets UL94VO at 1/8 inch
Weight: 72 milligrams
Lead and Mounting Temperatures: 260°C max for 10 seconds
Description
The MOSKEY
combines a MOSFET with a Schottky Recti-
fier to provide reverse blocking capability in a single three
leaded package. This device is well suited for applications
such as battery chargers and switching where the intrinsic
source-drain diode is an undesirable feature.
Absolute Maximum Ratings at 25°C
RATING
SYMBOL
VALUE
UNIT
Cathode-to-Source Voltage
VKSS
+/- 20
Vdc
Gate-to-Source Voltage
VGS
+/- 10
Vdc
Cathode Current:
Continuous @ TA=25
°C
IK
1.0
Adc
Single Pulsed
IKM
6.0
Apk
Total Power Dissipation
PD (1)
1.9
Watts
Storage Temperature
T stg
-55 to 150
°C
Operating Temperature
T op
-55 to 150
°C
Thermal Characteristics
Thermal Resistance:
Junction to Tab
Rjtab
20
°C/Watt
(1)Junction-to-ambient
Rja (1)
65
°C/Watt
(2)Junction-to-ambient
Rja (2)
150
°C/Watt
(1) Mounted on 2” square by 0.06’ thick FR4 board with a 1” x1” square 2 ounce copper pattern.
(2) Mounted on 0.06 thick FR4 board, using recommended footprint.
PRELIMINARY
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