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参数资料
| 型号： | URSF05G49-3P |
| 元件分类： | 晶闸管 |
| 英文描述： | 0.8 A, 400 V, SCR |
| 封装： | LEAD FREE, 13-5B1A, 3 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 代理商： | URSF05G49-3P |
URSF05G49-1P, URSF05G49-3P, URSF05G49-5P
2006-11-14
1
TOSHIBA THYRISTOR SILICON PLANAR TYPE
URSF05G49-1P, URSF05G49-3P, URSF05G49-5P
LOW POWER SWITCHING AND CONTROL
APPLICATIONS
Repetitive Peak OffState Voltage: VDRM = 400 V
Repetitive Peak Reverse Voltage: VRRM = 400 V
Average OnState Current: IT (AV) = 500 mA
Reduce a Quantity of Parts and Manufacturing
Process Because of Builtin RGK: RGK = 1k, 2.7k, 5.1k (Typ.)
ABSOLUTE MAXIMUM RATINGS
CHARACTERISTIC
SYMBOL
RATINGS
UNIT
Repetitive Peak OffState Voltage
and Repetitive Peak Reverse Voltage
VDRM
VRRM
400
V
NonRepetitive Peak Reverse
Voltage (NonRepetitive<5ms,
Tj = 0~125°C)
VRSM
500
V
Average OnState Current
(Half Sine Waveform)
IT (AV)
500
mA
R.M.S OnState Current
IT (RMS)
800
mA
9 (50Hz)
Peak One Cycle Surge OnState
Current (NonRepetitive)
ITSM
10 (60Hz)
A
I
2
t Limit Value
I
2
t
0.4
A
2
s
Critical Rate of Rise of OnState
Current
(Note 1)
di / dt
10
A / μs
Peak Gate Power Dissipation
PGM
0.1
W
Average Gate Power Dissipation
PG(AV)
0.01
W
Peak Forward Gate Voltage
VFGM
3.5
V
Peak Reverse Gate Voltage
VRGM
5
V
Peak Forward Gate Current
IGM
125
mA
Junction Temperature
Tj
40~125
°C
Storage Temperature Range
Tstg
40~125
°C
Note 1: di / dt Test condition
iG = 5mA, tgw=10μs,
tgr≤250ns
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
13-5B1A
Weight: 0.2 g (typ.)
相关PDF资料 |
PDF描述 |
|---|---|
| URSF05G49-5P | 0.8 A, 400 V, SCR |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| URSF05G49-5P | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:TOSHIBA THYRISTOR SILICON PLANAR TYPE |
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| URT20S-M | 制造商:Panduit Corp 功能描述: |
| URT50S-M | 制造商:Panduit Corp 功能描述: |
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