参数资料
型号: US104N-4
厂商: UNISONIC TECHNOLOGIES CO LTD
元件分类: 晶闸管
英文描述: 4 A, 400 V, SCR, TO-220AB
封装: TO-220, 3 PIN
文件页数: 2/4页
文件大小: 192K
代理商: US104N-4
UTC US104S/N
SCR
UTC UNISONIC TECHNOLOGIES CO., LTD.
2
QW-R301-011,C
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
MAX.
UNIT
Latching Current
IL
IG = 1 mA ,RGK = 1 k
6
mA
Circuit Rate Of Change Of
off-state Voltage
dV/dt
VD = 67 % VDRM ,RGK = 220
Tj = 125°C
5
V/s
On-state voltage
VTM
ITM = 8 A, tp = 380 s
Tj = 25°C
1.6
V
Threshold Voltage
Vt0
Tj = 125°C
0.85
V
Dynamic Resistance
Rd
Tj = 125°C
90
VDRM = VRRM, RGK = 220
Tj = 25°C
5
A
Off-state Leakage Current
IDRM
IRRM
VDRM = VRRM, RGK = 220
Tj = 125°C
1
mA
UTC US104N(STANDARD) ELECTRICAL CHARACTERISTICS
(Tj=25℃unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
MAX.
UNIT
Gate trigger Current
IGT
VD = 12 V, RL =33
2
15
mA
Gate trigger Voltage
VGT
VD = 12 V, RL=33
1.3
V
Gate non-trigger voltage
VGD
VD = VDRM, RL = 3.3 k
, Tj = 125°C
0.2
V
Holding Current
IH
IT = 100 mA, Gate open
30
mA
Latching Current
IL
IG = 1.2 IGT
60
mA
Circuit Rate Of Change Of
off-state Voltage
dV/dt
VD = 67 % VDRM , Gate open,Tj = 125°C
100
V/s
On-state voltage
VTM
ITM =8A, tp = 380 s, Tj = 25°C
1.6
V
Threshold Voltage
Vt0
Tj = 125°C
0.85
V
Dynamic Resistance
Rd
Tj = 125°C
62
Off-state Leakage Current
IDRM
IRRM
VDRM = VRRM
Tj = 25°C
Tj = 125°C
5
2
A
mA
THERMAL RESISTANCES
PARAMETER
SYMBOL
VALUE
UNIT
Junction to case (DC)
Rth(j-c)
3.0
K/W
Junction to ambient (DC)
Rth(j-a)
60
K/W
相关PDF资料
PDF描述
US104N-6 4 A, 600 V, SCR, TO-220AB
US104N-8 4 A, 800 V, SCR, TO-220AB
US104S-4 4 A, 400 V, SCR, TO-220AB
US104S-6 4 A, 600 V, SCR, TO-220AB
US104S-8 4 A, 800 V, SCR, TO-220AB
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