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参数资料
| 型号： | US108S-4 |
| 厂商： | UNISONIC TECHNOLOGIES CO LTD |
| 元件分类： | 晶闸管 |
| 英文描述： | 8 A, 400 V, SCR, TO-220AB |
| 封装： | TO-220, 3 PIN |
| 文件页数： | 2/5页 |
| 文件大小： | 181K |
| 代理商： | US108S-4 |
UTC US108S/N
SCR
UTC UNISONIC TECHNOLOGIES CO., LTD.
2
QW-R301-012,B
UTC US108S(SENSITIVE) ELECTRICAL CHARACTERISTICS
(Tj=25℃unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
MAX.
UNIT
Gate trigger Current
IGT
VD = 12 V, RL =140
200
A
Gate trigger Voltage
VGT
VD = 12 V, RL=140
0.8
V
Gate non-trigger voltage
VGD
VD = VDRM, RL = 3.3 k
, RGK = 220
Tj = 125°C
0.1
V
Reverse gate voltage
VRG
IRG = 10 A
8
V
Holding Current
IH
IT = 50 mA, RGK = 1 k
5
mA
Latching Current
IL
IG = 1 mA ,RGK = 1 k
6
mA
Circuit Rate Of Change Of
off-state Voltage
dV/dt
VD = 65 % VDRM ,RGK = 220
Tj = 125°C
5
V/s
On-state voltage
VTM
ITM = 16A, tp = 380 s
Tj = 25°C
1.6
V
Threshold Voltage
Vt0
Tj = 125°C
0.85
V
Dynamic Resistance
Rd
Tj = 125°C
46
mΩ
Off-state Leakage Current
IDRM
IRRM
VDRM = VRRM, RGK = 220
Tj = 25°C
Tj = 125°C
5
1
A
mA
UTC US108N(STANDARD) ELECTRICAL CHARACTERISTICS
(Tj=25℃unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
MAX.
UNIT
Gate trigger Current
IGT
VD = 12 V, RL =33
2
15
mA
Gate trigger Voltage
VGT
VD = 12 V, RL=33
1.3
V
Gate non-trigger voltage
VGD
VD = VDRM, RL = 3.3 k
, Tj = 125°C
0.2
V
Holding Current
IH
IT = 100 mA, Gate open
30
mA
Latching Current
IL
IG = 1.2 IGT
70
mA
Circuit Rate Of Change Of
off-state Voltage
dV/dt
VD = 67 % VDRM , Gate open,Tj = 125°C
150
V/s
On-state voltage
VTM
ITM = 16A, tp = 380 s, Tj = 25°C
1.6
V
Threshold Voltage
Vt0
Tj = 125°C
0.85
V
Dynamic Resistance
Rd
Tj = 125°C
46
mΩ
Off-state Leakage Current
IDRM
IRRM
VDRM = VRRM
Tj = 25°C
Tj = 125°C
5
2
A
mA
THERMAL RESISTANCES
PARAMETER
SYMBOL
VALUE
UNIT
Junction to case (DC)
Rth(j-c)
20
K/W
Junction to ambient (DC)
Rth(j-a)
60
K/W
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| US108SG-4-TA3-T | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:SCRS |
| US108SG-6-TA3-T | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:SCRS |
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| US108SL-4-TA3-T | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:SCRS |
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