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| 型号： | US1M-13 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/4页 |
| 文件大小： | 119K |
| 描述： | DIODE ULTRA FAST SW 1000V 1A SMA |
| 标准包装： | 1 |
| 二极管类型： | 标准 |
| 电压 - (Vr)（最大）： | 1000V（1kV） |
| 电流 - 平均整流 (Io)： | 1A |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 1.7V @ 1A |
| 速度： | 快速恢复 =< 500 ns，> 200mA（Io） |
| 反向恢复时间(trr)： | 75ns |
| 电流 - 在 Vr 时反向漏电： | 5µA @ 1000V |
| 电容@ Vr, F： | 10pF @ 4V，1MHz |
| 安装类型： | 表面贴装 |
| 封装/外壳： | DO-214AC，SMA |
| 供应商设备封装： | SMA |
| 包装： | 标准包装 |
| 其它名称： | US1MDIDKR |
US1A - US1M
Document number: DS16008 Rev. 10 - 2
2 of 4
www.diodes.com
October 2011
? Diodes Incorporated
US1A - US1M
Maximum Ratings
@TA
= 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic Symbol US1A US1B
US1D US1G US1J US1K US1M Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage (Note 4)
VRRM
VRWM
VR
50 100 200 400 600 800 1000 V
RMS Reverse Voltage
VR(RMS)
35 70 140 280 420 560 700 V
Average Rectified Output Current @ TT
= 75
°CIO
1.0 A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
IFSM
30 A
Thermal Characteristics
Characteristic Symbol Value Unit
Maximum Thermal Resistance, Junction to Terminal
RθJT
30
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-65 to +150
°C
Electrical Characteristics
@TA
= 25°C unless otherwise specified
Characteristic Symbol US1A US1B
US1D US1G US1J US1K US1M Unit
Forward Voltage Drop @ IF
= 1.0A V
FM
1.0 1.3 1.7 V
Peak Reverse Current @ TA
= 25
°C
at Rated DC Blocking Voltage (Note 4) @ TA
= 100
°C
IRM
5.0
100
μA
Reverse Recovery Time (Note 5)
trr
50 75 ns
Typical Total Capacitance (Note 6)
CT
20 10 pF
Notes: 4. Short duration pulse test used to minimize self-heating effect.
5. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
6. Measured with IF
= 0.5A, I
R
= 1.0A, I
rr
= 0.25A. See figure 5.
0
0.5
1.0
25 50
75
100 125 150
I, AVE
R
A
G
E
R
E
C
T
I
F
IED
C
U
R
R
E
N
T
(A)
O
T , TERMINAL TEMPERATURE ( C)T
°
Fig. 1 Forward Current Derating Curve
0.01
0.1
1.0
10
00.40.81.2 1.6 2.0
I, I
N
S
T
A
N
T
A
N
E
O
U
S
F
O
R
WA
R
D
C
U
R
R
E
N
T
(A)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)F
Fig. 2 Typical Forward Characteristics
US1A - US1D
US1G
US1J - US1M
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相关代理商/技术参数 |
参数描述 |
|---|---|
| US1M-13-F | 功能描述:整流器 1000V 1A RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| US1M-13-F-CUT TAPE | 制造商:DIODES 功能描述:US1M Series 1000 V 1 A Surface Mount Ultra-Fast Rectifier - DO-214AC |
| US1MB | 制造商:SSE 制造商全称:SSE 功能描述:SURFACE MOUNT ULTRA FAST SWITCHING RECTIFIER |
| US1ME | 制造商:MCC 制造商全称:Micro Commercial Components 功能描述:1 Amp Ultra Fast Rectifier 50 to 1000 Volts |
| US1M-E3 | 制造商:Vishay Semiconductors 功能描述:RECTIFIER, FAST, SINGLE, 1A, 1KV, DO-214AC-2; Diode Type:Fast Recovery; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:1kV; Forward Current If(AV):1A; Forward Voltage VF Max:1.7V; Reverse Recovery Time trr Max:75ns ;RoHS Compliant: Yes |
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