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参数资料
| 型号： | USF8J48 |
| 元件分类： | 晶闸管 |
| 英文描述： | 12.6 A, 600 V, SCR |
| 封装： | LEAD FREE, 13-10J2B, 3 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 393K |
| 代理商： | USF8J48 |
SF8G48,SF8J48,USF8G48,USF8J48
2004-07-06
2
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
SF8G48
USF8G48
400
SF8J48
Repetitive
peakoff-state voltage
and repetitive
peakreverse voltage
USF8J48
VDRM
VRRM
600
V
SF8G48
USF8G48
500
SF8J48
Non-repetitive peak
reverse voltage
(non-repetitive < 5 ms
Tj = 0~125°C
USF8J48
VRSM
720
V
Average on-state current
IT (AV)
8
A
rms on-state current
IT (RMS)
12.6
A
120 (50 Hz)
Peak one-cycle surge on-state
current (non-repetitive)
ITSM
132 (60 Hz)
A
I
2
t limit value
I
2
t
72
A
2
s
Critical rate of rise of
on-state current
(Note 1)
di /dt
100
A/μs
Peak gate power dissipation
PGM
5
W
Average gate power dissipation
PG (AV)
0.5
W
Peak forward gate voltage
VFGM
10
V
Peak reverse gate voltage
VRGM
5
V
Peak forward gate current
IGM
2
A
Junction temperature
Tj
40~125
°C
Strage temperature range
Tstg
40~125
°C
Electrical Charcteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Repetitive peak off-state current and
repetitive peak reverse
IDRM
IRRM
VDRM = VRRM = Rated
―
10
μA
Peak on-state voltage
VTM
ITM = 25 A
―
1.5
V
Gate trigger voltage
VGT
―
1.0
V
Gate trigger current
IGT
VD = 6 V, RL = 10
―
10
mA
Gate non-trigger voltage
VGD
VD = Rated × 2 / 3, Tc = 125°C
0.2
―
V
Critical rate of rise of off-state voltage
dv / dt
VDRM = Rated, Tc = 125°C
Exponential Rise
―
50
―
V /
μs
Holding current
IH
VD = 6 V, ITM = 1 A
―
40
mA
Latching current
IL
VD = 6 V, f = 50 Hz
tgw = 50 μs, iG = 30 mA
―
50
mA
Thermal resistance
Rth (j-c)
Junction to Case, DC
―
2.8
°C / W
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