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参数资料
| 型号： | USM12G48A |
| 元件分类： | 晶闸管 |
| 英文描述： | 400 V, 12 A, TRIAC |
| 封装： | LEAD FREE, 13-10J2A, 3 PIN |
| 文件页数： | 3/6页 |
| 文件大小： | 358K |
| 代理商： | USM12G48A |
SM12(G,J)48,USM12(G,J)48,SM12(G,J)48A,USM12(G,J)48A
2006-10-30
3
ELECTRICAL CHARACTERISTICS (Ta=25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Repetitive Peak Off-State Current
IDRM
VDRM=Rated
―
20
A
I
T2 (
+) , Gate (+)
―
1.5
II
T2 (
+) , Gate ()
―
1.5
III
T2 (
) , Gate ()
―
1.5
Gate Trigger Voltage
IV
VGT
VD=12V
RL=20
T2 (
) , Gate (+)
―
V
I
T2 (
+) , Gate (+)
―
30
II
T2 (
+) , Gate ()
―
30
III
T2 (
) , Gate ()
―
30
SM12G48
SM12J48
IV
T2 (
) , Gate (+)
―
I
T2 (
+) , Gate (+)
―
20
II
T2 (
+) , Gate ()
―
20
III
T2 (
) , Gate ()
―
20
Gate Trigger
Current
SM12G48A
SM12J48A
IV
IGT
VD=12V
RL=20
T2 (
) , Gate (+)
―
mA
Peak On-State Voltage
VTM
ITM=17A
―
1.5
V
Gate Non-Trigger Voltage
VGD
VD=Rated, Tc=125°C
0.2
―
V
Holding Current
IH
VD=12V, ITM=1A
―
50
mA
Thermal Resistance
Rth (j-c)
Junction to Case, AC
―
2.4
°C / W
(U)SM12G48
(U)SM12J48
―
300
―
Critical Rate of Rise of
Off-State Voltage
(U)SM12G48A
(U)SM12J48A
dv / dt
VDRM=Rated, Tj=125°C
Exponential Rise
―
200
―
V /
s
(U)SM12G48
(U)SM12J48
10
―
Critical Rate of Rise of
Off-State Voltage at
Commutation
(U)SM12G48A
(U)SM12J48A
(dv / dt) c
VDRM=400V, Tj=125°C
(di / dt) c=6.5A / ms
4
―
V /
s
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| USM12J48A | 600 V, 12 A, TRIAC |
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| USM16J48A | 600 V, 16 A, TRIAC |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| USM12J48 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRIAC|600V V(DRM)|12A I(T)RMS|TO-263VAR |
| USM12J48(Q) | 制造商:Toshiba America Electronic Components 功能描述: |
| USM12J48A | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRIAC|600V V(DRM)|12A I(T)RMS|TO-263VAR |
| USM12PT | 制造商:CHENMKO 制造商全称:Chenmko Enterprise Co. Ltd. 功能描述:SUPER FAST SILICON RECTIFIER |
| USM12SPT | 制造商:CHENMKO 制造商全称:Chenmko Enterprise Co. Ltd. 功能描述:SUPER FAST SILICON RECTIFIER |
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