参数资料
型号: UT134G-8
厂商: UNISONIC TECHNOLOGIES CO LTD
元件分类: 晶闸管
英文描述: 800 V, 4 A, TRIAC, TO-126
封装: PLASTIC PACKAGE-3
文件页数: 2/5页
文件大小: 133K
代理商: UT134G-8
UTC UT134F/G
TRIAC
UTC UNISONIC TECHNOLOGIES CO., LTD.
2
QW-R401-008,B
*Although not recommended, off-state voltages up to 800V may be applied without damage, but the traic may switch
to the on-state. The rate of rise of current should not exceed 3A/
s.
THERMAL RESISTANCES
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
Thermal resistance Junction to mounting base
Full cycle
Half cycle
Rth j-mb
3.0
3.7
K/W
Thermal resistance Junction to ambient
(In free air)
Rth j-a
100
K/W
STATIC CHARACTERISTICS (Tj=25°C, unless otherwise stated)
MAX
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
UT134F UT134G
UNIT
Gate trigger current
IGT
VD = 12 V; IT = 0.1 A
T2+ G+
T2+ G-
T2- G-
T2- G+
5
8
11
30
25
70
50
100
mA
Latching current
IL
VD = 12 V; IGT = 0.1 A
T2+ G+
T2+ G-
T2- G-
T2- G+
7
16
5
7
20
30
20
30
45
30
45
mA
Holding current
IH
VD = 12 V; IGT = 0.1 A
5
15
30
mA
On-state voltage
VT
IT = 5 A
1.4
1.7
V
VD = 12 V; IT = 0.1 A
0.7
1.5
V
Gate trigger voltage
VGT
VD = 400V ; IT = 0.1 A; Tj
=125°C
0.25
0.4
V
Off-state leakage current
ID
VD = VDRM(max) ; Tj = 125 °C
0.1
0.5
mA
DYNAMIC CHARACTERISTICS (Tj=25°C, unless otherwise stated)
MIN
PARAMETER
SYMBOL
CONDITIONS
UT134F UT134G
TYP
MAX UNIT
Critical rate of rise of
Off-state voltage
dVD /dt
VDM = 67% VDRM(max) ; Tj =125°C;
exponential waveform; gate open
circuit
50
200
250
V/s
Critical rate of change of
Commutating voltage
dVcom/dt
VDM=400V;Tj=95°C;IT(RMS)=4A;
dIcom /dt =1.8A/ms; gate open
circuit
10
50
V/s
Gate controlled turn-on
time
tgt
ITM = 6 A; VD= VDRM(max) ;
IG=0.1A; dIG/dt=5A/s
2
s
相关PDF资料
PDF描述
UT136F-5 500 V, 4 A, TRIAC, TO-252
UT136F-6 600 V, 4 A, TRIAC, TO-252
UT136F-8 800 V, 4 A, TRIAC, TO-252
UT136G-5 500 V, 4 A, TRIAC, TO-252
UT136G-6 600 V, 4 A, TRIAC, TO-252
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