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参数资料
| 型号： | UT137FG-6 |
| 厂商： | UNISONIC TECHNOLOGIES CO LTD |
| 元件分类： | 晶闸管 |
| 英文描述： | 600 V, 8 A, TRIAC, TO-220AB |
| 封装： | PLASTIC, TO-220F, 3 PIN |
| 文件页数： | 4/5页 |
| 文件大小： | 139K |
| 代理商： | UT137FG-6 |
UTC UT137FF/FG
TRIAC
UTC UNISONIC TECHNOLOGIES CO., LTD. 4
QW-R401-016,B
1.5
2
0
1
0.5
25
VT/V
20
15
5
0
Figure 10.Typical and Maximum
On-state Characteristic
IT/A
Figure 7.Normalised Gate Trigger Current
IGT(Tj)/IGT(25℃),vs Junction Temperature Tj
100
150
-50
50
0
3
1
Tj/℃
2
2.5
1.5
0.5
0
Figure 8.Normalised Latching Current
IL(Tj)/IL(25℃),vs Junction Temperature Tj
IL(25℃)
IL(Tj)
100
150
-50
50
0
3
1
Tj/℃
2
2.5
1.5
0.5
0
Figure 9.Normalised Holding Current
IH(Tj)/IH(25℃),vs Junction Temperature Tj
IH(25℃)
IH(Tj)
Figure 12.Typical commutation dV/dt vs junction
temperature,parameter commutation dlT/dt.The triac should
commutate when the dV/dt is below the value on the
appropriate curve for pre-commutation dlT/dt
2.5
3
10
dV/dt(V/us)
1000
10
100
1
100
150
50
0
Tj/℃
IGT(25℃)
IGT(Tj)
100
150
-50
50
0
3
1
Tj/℃
2
2.5
1.5
0.5
0
T2+G+
T2+G-
T2-G-
T2-G+
UT137FG
UT137FF
off-state dV/dt limit
dlcom/dt=10A/
ms
7.9
3.6
4.7
2.8
6.1
typ
max
Vo=1.264V
Rs=0.0378Ohms
Tj=125℃
tp/s
Figure 11.Transient Thermal Impedance
Zth j-hs,vs Pulse Width tp
1ms
0.1ms
10us
0.01
0.1
10ms
0.1s
1s
10s
1
10
tp
t
PD
bidirectional
unidirectional
with heatsink compound
without heatsink compound
Zth j-hs (K/W)
相关PDF资料 |
PDF描述 |
|---|---|
| UT137FG-8 | 800 V, 8 A, TRIAC, TO-220AB |
| UT138E-5 | 500 V, 12 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-220AB |
| UT138E-6 | 600 V, 12 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-220AB |
| UT138E-8 | 800 V, 12 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-220AB |
| UT138F-5 | 500 V, 12 A, TRIAC, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| UT137G | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:TRIACS |
| UT138E | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:TRIACS |
| UT138F | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:TRIACS |
| UT138FE | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:TRIACS |
| UT138FF | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:Glass passivated triacs in a full pack plastic envelope, intended for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance. |
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