参数资料
型号: UT137G-5
厂商: UNISONIC TECHNOLOGIES CO LTD
元件分类: 晶闸管
英文描述: 500 V, 8 A, TRIAC, TO-220AB
封装: PLASTIC, TO-220, 3 PIN
文件页数: 2/5页
文件大小: 197K
代理商: UT137G-5
UTC UT137F/G
TRIAC
UTC UNISONIC TECHNOLOGIES CO., LTD. 2
QW-R401-014,B
THERMAL RESISTANCES
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
Thermal Resistance Junction to Mounting Base
Full cycle
Half cycle
Rth j-mb
2.0
2.4
K/W
Thermal Resistance Junction to Ambient
In free air
Rth j-a
60
K/W
STATIC CHARACTERISTICS (Tj=25°C,unless otherwise specified)
MAX
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
UT137F UT137G
UNIT
Gate trigger current
IGT
VD=12V, IT=0.1A
T2+ G+
T2+ G-
T2- G-
T2- G+
5
8
11
30
25
70
50
100
mA
Latching current
IL
VD=12V, IGT=0.1A
T2+ G+
T2+ G-
T2- G-
T2- G+
7
16
5
7
30
45
30
45
60
45
60
mA
Holding current
IH
VD = 12 V, IGT = 0.1 A
5
20
40
mA
On-state voltage
VT
IT=10A
1.3
1.65
V
VD=12V, IT=0.1A
0.7
1.5
V
Gate trigger voltage
VGT
VD=400V, IT=0.1A, Tj=125
°C
0.25
0.4
V
Off-state leakage current
ID
VD=VDRM(max) , Tj=125
°C
0.1
0.5
mA
DYNAMIC CHARACTERISTICS(Tj=25°C,unless otherwise specified)
MIN
PARAMETER
SYMBOL
CONDITIONS
UT137F UT137G
TYP MAX UNIT
Critical rate of rise of
Off-state voltage
dVD /dt
VDM = 67% VDRM(max) , Tj =125°C,
exponential waveform, gate open
circuit
50
200
250
V/s
Critical rate of change of
Commutating voltage
dVcom/dt
VDM=400V, Tj=95°C, IT(RMS)=8A,
dIcom /dt =3.6A/ms, gate open circuit
10
20
V/s
Gate controlled turn-on
time
tgt
ITM = 12 A, VD= VDRM(max) , IG=0.1A,
dIG/dt=5A/s
2
s
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