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参数资料
| 型号： | UT61256C |
| 英文描述： | ASYNCHRONOUS STATIC RAM- High Speed |
| 中文描述： | 异步静态RAM高速 |
| 文件页数： | 7/12页 |
| 文件大小： | 96K |
| 代理商： | UT61256C |
UTRON
UT61256C
Rev. 1.4
32K X 8 BIT HIGH SPEED CMOS SRAM
UTRON TECHNOLOGY INC.
P80031
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: 886-3-5777882 FAX: 886-3-5777919
4
ABSOLUTE MAXIMUM RATINGS*
PARAMETER
SYMBOL
RATING
UNIT
Terminal Voltage with Respect to Vss
VTERM
-0.5 to +6.5
V
Operating Temperature
TA
0 to +70
J
Storage Temperature
TSTG
-65 to +150
J
Power Dissipation
PD
1
W
DC Output Current
IOUT
50
mA
Soldering Temperature (under 10 sec)
Tsolder
260
J
*Stress greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a
stress rating only and functional operation of the device or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to the absolute maximum rating conditions for extended period may
affect device reliability.
TRUTH TABLE
MODE
CE
OE
WE
I/O OPERATION
SUPPLY CURRENT
Standby
H
X
High - Z
ISB
,ISB1
Output Disable
L
H
High - Z
ICC
Read
L
H
DOUT
ICC
Write
L
X
L
DIN
ICC
Note: H = VIH, L=VIL, X = Don't care.
DC ELECTRICAL CHARACTERISTICS (V
CC = 5V
10%, TA = 0J to 70J )
PARAMETER
SYMBOL TEST CONDITION
MIN.
MAX.
UNIT
Input High Voltage
VIH
2.2
VCC+0.5
V
Input Low Voltage
VIL
- 0.5
0.8
V
Input Leakage Current
ILI
VSS
VIN
VCC
- 1
1
A
Output Leakage Current
ILO
VSS
VI/O
VCC
CE =VIH or OE =VIH or WE =VIL
- 1
1
A
Output High Voltage
VOH
IOH = - 4mA
2.4
-
V
Output Low Voltage
VOL
IOL = 8mA
-
0.4
V
- 8
-
190
mA
- 10
-
180
mA
- 12
-
160
mA
Operating Power
Supply Current
ICC
Cycle time=Min.
CE = VIL , II/O = 0mA
- 15
-
140
mA
Standby Current (TTL)
ISB
CE = VIH
-
30
mA
Standby Current (CMOS)
ISB1
CE
VCC-0.2V
-
5
mA
Notes:
1. Overshoot : Vcc+2.0v for pulse width less than 6ns.
2. Undershoot : Vss-2.0v for pulse width less than 6ns.
3. Overshoot and Undershoot are sampled, not 100% tested.
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