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参数资料
| 型号： | UT6164C |
| 英文描述： | ASYNCHRONOUS STATIC RAM- High Speed |
| 中文描述： | 异步静态RAM高速 |
| 文件页数： | 6/10页 |
| 文件大小： | 84K |
| 代理商： | UT6164C |
UTRON
UT6164C
Rev. 1.1
8K X 8 BIT HIGH SPEED CMOS SRAM
UTRON TECHNOLOGY INC.
P80074
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: 886-3-5777882 FAX: 886-3-5777919
5
TIMING WAVEFORMS
READ CYCLE 1 (Address Controlled) (1,2,4)
tRC
Address
DOUT
Data Valid
tAA
tOH
READ CYCLE 2 (
1
CE BCE2 and OE Controlled) (1,3,5,6)
t RC
t AA
t ACE1
t ACE2
t OE
t CHZ1
t CHZ2
t OHZ
t CLZ1
t CLZ2
t OH
t OLZ
HIGH-Z
Data Valid
HIGH-Z
Address
CE1
CE2
OE
Dout
Notes :
1.
is high for read cycle.
2.
Device is continuously selected
1 =VIL and CE2=VIH.
3.
Address must be valid prior to or coincident with
1 and CE2 transition; otherwise tAA is the limiting parameter.
4.
is low.
5.
tCLZ1, tCLZ2, tOLZ, tCHZ1, tCHZ2 and tOHZ are specified with CL=5pF. Transition is measured
500mV from steady
state.
6. At any given temperature and voltage condition, tCHZ1 is less than tCLZ1, tCHZ2 is less than tCLZ2, tOHZ is less than
tOLZ.
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| UT6164C32 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:64K X 32 SYNCHRONOUS PIPELINED BURST CMOS SRAM |
| UT6164C32Q-6 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:64K X 32 SYNCHRONOUS PIPELINED BURST CMOS SRAM |
| UT6164C32T-6 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:64K X 32 SYNCHRONOUS PIPELINED BURST CMOS SRAM |
| UT6164C64A | 制造商:未知厂家 制造商全称:未知厂家 功能描述:64K X 64 SYNCHRONOUS PIPELINED BURST CMOS SRAM |
| UT6164C64AQ-5 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:64K X 64 SYNCHRONOUS PIPELINED BURST CMOS SRAM |
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