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参数资料
| 型号： | UZXMN10A07ZTA |
| 厂商： | ZETEX PLC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | SOT-89, 3 PIN |
| 文件页数： | 4/7页 |
| 文件大小： | 183K |
| 代理商： | UZXMN10A07ZTA |
ZXMN10A07Z
SEMICO NDUC TORS
ISSUE 6 - MAY 2004
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT CONDITIONS
STATIC
Drain-source breakdown voltage
V(BR)DSS
100
V
ID= 250 A, VGS=0V
Zero gate voltage drain current
IDSS
1
A
VDS= 100V, VGS=0V
Gate-body leakage
IGSS
100
nA
VGS= 20V, VDS=0V
Gate-source threshold voltage
VGS(th)
2.0
V
ID= 250 A, VDS=VGS
Static drain-source on-state
resistance
(1)
RDS(on)
0.7
VGS= 10V, ID= 1.5A
0.9
VGS=6V, ID =1A
Forward transconductance
(1) (3)
gfs
1.6
S
VDS= 15V, ID=1A
DYNAMIC
(3)
Input capacitance
Ciss
138
pF
VDS= 50V, VGS=0V
f=1MHz
Output capacitance
Coss
12
pF
Reverse transfer capacitance
Crss
6pF
SWITCHING
(2) (3)
Turn-on-delay time
td(on)
1.8
ns
VDD= 50V, ID=1A
RG6.0 ,VGS= 10V
Rise time
tr
1.5
ns
Turn-off delay time
td(off)
4.1
ns
Fall time
tf
2.1
ns
Total gate charge
Qg
2.9
nC
Gate-source charge
Qgs
0.7
nC
VDS= 50V, VGS= 10V
ID=1A
Gate drain charge
Qgd
1nC
SOURCE-DRAIN DIODE
Diode forward voltage
(1)
VSD
0.85
0.95
V
Tj=25°C, IS= 1.5A,
VGS=0V
Reverse recovery time
(3)
trr
27
ns
Tj=25°C, IF= 1A,
di/dt=100A/ s
Reverse recovery charge
(3)
Qrr
12
nC
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
NOTES
(1) Measured under pulsed conditions. Pulse width
300 s; duty cycle
2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
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