参数资料
型号: V10P10HM3/87A
厂商: Vishay General Semiconductor
文件页数: 3/3页
文件大小: 90K
描述: DIODE 10A 100V SCHOTTKY TO277A
标准包装: 6,500
系列: eSMP™, TMBS®
二极管类型: 肖特基
电压 - (Vr)(最大): 100V
电流 - 平均整流 (Io): 10A
电压 - 在 If 时为正向 (Vf)(最大): 680mV @ 10A
速度: 快速恢复 =< 500 ns,> 200mA(Io)
电流 - 在 Vr 时反向漏电: 150µA @ 100V
安装类型: 表面贴装
封装/外壳: TO-277,3-PowerDFN
供应商设备封装: TO-277A
包装: 带卷 (TR)
New Product
\@ v10P107 Vishay General Semiconductor
RATINGS AND cHARAcTERIsT|cs cuRvEs(T A : 25 “C unless otherwise noted)
I2
Too
Resistive or Inductive Load
a
:1
a7
0.1
Average Forward Current (A)
on
2 TL measured
at me Cathode Band Terminal
Instantaneous Reverse Current (mA)
0 25 50 75 too 125 I50 I75
Lead Temperature (°C) Percent oi Rated Peak Reverse Voltage (%)
Fig. 1 - Maximum FonNard Current Derating Curve
Fig. 4 - Typical Reverse Characteristics
Average Power Loss (W)
- X
Illlillll Illliil
I l 0
0 I 2 3 4 5 6 7 3 9 m M Q m
Average Forward Current (A)
Fig. 2 - FonNard Power Loss Characteristics
I00
3
Instantaneous Forward Current (A)
P0.01
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance
Too
Transient Thermal Impedance (CC/W)
t— Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance
Document Number: 89006 For technical questions within your region, please contact one of the following: www.visnay.com
Revision: 25-May-11 DiodesAmerIcas@vIshay.com, DiodesAsia@vishay.Com, DIodesEurope@vishay.com 3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay_com/doc?91000
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